1) SPICE model of Single electron transistor
单电子晶体管SPICE模型
2) single electron transistor HSPICE model
单电子晶体管HSPICE模型
3) single electron transistor
单电子晶体管
1.
Quantum calculations of tunneling resistance in single electron transistors;
单电子晶体管隧穿电阻的量子计算
2.
A numerical analysis of the I-V property of single electron transistors;
单电子晶体管I-V特性数值分析
3.
The successful fabrication of Si based single electron transistors (SETs) on P type SIMOX substrates,by using electron beam (EB) lithography and reactive ion etching (RIE) processes is reported in this paper.
采用电子束光刻技术和反应离子刻蚀等工艺 ,在 P型 SIMOX硅片上成功地制备了一种单电子晶体管。
4) single-electron transistor
单电子晶体管
1.
Si single-electron transistor with in-plane point-contact metal gates;
点接触平面栅型硅单电子晶体管
2.
Based on I-V characteristics of single-electron transistor and the idea of MOS digital circuit design,an inverter using the single-electro and MOS transistors is proposed and some other logic gate circuits are educed.
基于单电子晶体管的I-V特性和MOS晶体管的逻辑电路设计思想,提出了1个单电子晶体管和MOS晶体管混合的反相器电路,进而推导出其它基本逻辑门电路,并最终实现了一个半加器电路。
3.
Based on the I-V characteristics of hybrid structure of double-input single-electron transistor and MOSFET and the concepts of digital integrated circuit design,a comparator,which consists of 5 double-gate SETs and 6 MOSFETs,is proposed.
基于双输入单电子晶体管与MOSFET的混合结构I-V特性和数字电路的逻辑设计思想,提出了一种由5个双栅极SET和6个MOSFET构成的一位比较器电路结构。
5) single electron transistors
单电子晶体管
1.
The structures, principles, characters and applications of single electron transistors are clarified,based on the traditional theories.
基于传统单电子理论 ,阐述了单电子晶体管的结构、原理、特点及应用。
2.
Based on an equivalent circuit for single electron transistors, the electrostatic energy on the charges is deduced.
通过研究单电子晶体管在电路中的静电能量的变化 ,得到了它的阻塞、导通情况与其两端偏压和控制栅压之间的关系 ,从而给出了它的通断图 。
3.
A few novel single electron transistors are discussed in details, which have more chance to be used to construct next generation electronics with new system architectures.
随微细加工技术的发展 ,单电子晶体管的研究越来越受到重视。
6) RF single-electron transistor
RF单电子晶体管
补充资料：晶体管-晶体管逻辑电路
| 晶体管-晶体管逻辑电路 transistor-transistor logic 集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。 |
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条