1) Power VDMOS
功率VDMOS
1.
Power VDMOS(Vertical Double-Diffusion MOSFET)is the most favorable device available for high speed, medium power applications because of its characteristics such as high input impedance, high power gain, easy to drive and good thermal stability.
功率VDMOS(垂直双扩散MOSFET)以其高输入阻抗、高功率增益、驱动电路简单和热稳定性好等优点,在高速度和中等功率场合得到了广泛的应用。
2) power VDMOS device
功率VDMOS器件
1.
A total dose radiation hardened power VDMOS device is fabricated by growing the thin gate SiO2 after the P-body diffusion and using a double passivation layer (Si3N4-SiO2).
采用先形成P-body区再生长栅氧化层的新工艺流程和薄栅氧化层配合Si3N4-SiO2钝化层加固工艺,研制出一种抗总剂量辐照加固功率VDMOS器件。
3) High voltage power VDMOS
高压功率VDMOS
4) VDMOS transistor
VDMOS管
1.
This Article Mainly Introduced the manufacturing process and structure of VD-MOS transistor, and compared the charateristic of VDMOS transistor to bipolar transistor s.
本文主要介绍VDMOS管的制造工艺与结构，并将VDMOS管的特性与双极晶体管作比较，突出了VDMOS管在电子镇流器中作为开关管的优势，对VD－MOS管在电子镇流器中的具体使用条件作了说明。
5) VDMOS switching tube
VDMOS开关管
6) punch-through VDMOS
穿通型VDMOS
1.
Taking an example for 500 V VDMOS,we analyze the relationship between on-resistance and voltage of VDMOS,and study the relationship between the depth of epitaxial layer of punch-through VDMOS and breakdown voltage,on-resistance in detail.
以500 V VDMOS为例,首先分析了高压VDMOS导通电阻与电压的关系,重点讨论穿通型VDMOS的外延厚度与器件的耐压和导通电阻的关系。
补充资料：70t超高功率电弧炉(淮阴钢铁公司)
70t超高功率电弧炉(淮阴钢铁公司)
彝 70t超高功率电弧炉(淮阴钢铁公司)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条