1) semiconductor nano-granular materials embedded in medium matrix
半导体纳米颗粒镶嵌材料
2) films embedded nanometer semi-conductor particles
纳米半导体颗粒镶嵌薄膜
3) semiconductor nano-particles
半导体纳米颗粒
1.
Compound films embedded with GaAs semiconductor nano-particles were successfully prepared by means of radio frequency (RF) magnetron co-sputtering technology.
采用射频磁控共溅射技术成功制备GaAs半导体纳米颗粒镶嵌薄膜,GaAs在薄膜中所占分子百分比达 1 9。
4) nano semiconductor material
纳米半导体材料
1.
The observation method of the surface form,defection of nano semiconductor material is introduced in this paper,the method in studying of the luminous manner and the optical characteris-tics of quantum dot are also given.
简要地介绍了纳米半导体材料表面形貌、位错缺陷的观测手段与方法以及研究量子点的发光行为和光学性质的手段与方法。
5) semiconductor nanomaterial
半导体纳米材料
1.
Research progress,physics properties and the application prospect of semiconductor nanomaterial were introduced.
介绍了半导体纳米材料的研究进展、物理特性和应用前
2.
However, semiconductor nanomaterials have potential applications in LBD, non-linear material, light-sensitive materials, and photocatalyst materials, due to their extraordinary performance.
而半导体纳米材料因其所具有的优异性能在发光器件、非线性材料、光敏感材料、光催化材料等方面表现了出了广阔的应用前景,未来的趋势,半导体的制造技术将进入一个纳米时代。
3.
The objective of this dissertation is to explore new avenue for solution-based chemical routes to prepare indium-basedⅢ-Ⅵgroup inorganic semiconductor nanomaterials.
本论文旨在探索铟基Ⅲ-Ⅵ族无机半导体纳米材料的液相合成新途径。
6) nanometer-sized semiconductor materials
半导体纳米材料
1.
In this dissertation, the recent results, analysis methods, and theories of optical nonlinearities of nanometer-sized semiconductor materials were summarized systemically.
本论文系统总结了近年来国内外关于半导体纳米材料的光学非线性特性及光限幅效应的研究成果、研究方法及相应的理论分析方法。
补充资料：气敏半导体(见传感器半导体材料)
气敏半导体(见传感器半导体材料)
gas sensory sernieonduetor
气敏半导体gas sensory Semieonductor见传感器半导体材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条