2) multi-gate MOSFET
多面栅MOSFET
1.
As a new-type semiconductor device, multi-gate MOSFETs have many advantages compared with traditional MOSFETs, such as the nearly ideal subthreshold slope, higher carrier mobility, higher transconductance and higher driven-current, and stronger ability against short-channel effects.
多面栅MOSFET作为一种新型的半导体器件与传统MOSFET相比具有许多的优势:接近理想的亚阈值特性、较高的载流子迁移率、较高的跨导和电流驱动能力、较强的抑制器件短沟道效应的能力等。
3) vertical nMOSFET
纵向MOSFET
5) Vertical Double Diffused MOSFET
功率纵向双扩散MOSFET
1.
Effect of Bipolar Turn-On on the Static Current-Voltage Characteristics of Power Vertical Double Diffused MOSFET;
双极晶体管导通状态对功率纵向双扩散MOSFET静态电流-电压特性的影响
6) MOSFET-gate dielectric
MOSFET栅介质
1.
The new research of MOSFET-gate dielectric was summarized.
本文综述了MOSFET栅介质的最新研究状况。
补充资料：看涨的纵向多空套做
看涨的纵向多空套做 Bull Vertical Spread
定义：
一种被看涨投资者采用的投资策略。投资者认为某商品的市价将上升，但同时又希望控制预测错误造成损失的可能性。