Accelerators simulation experiment on single event effects in semiconductor devices;

In order to improve the forward conduction characteristics of silicon semiconductor devices, a comprehensive study of the influences of boron diffusion, phosphorous diffusion, doping concentration distribution in P~+-P region of sintered Al-Mo electrode and the minority carrier life on the forward conduction characteristics is performed.

They have extensive application prospect in fields such as high brightness light emitting diodes,short wavelength laser diodes,high performance UV detector,and high temperature,high frequency,large power semiconductor devices.

Simulation & Analysis of a Hydrodynamic Model of Semiconductor Devices by a Finite Element Method;

Research for incompetent sources of semiconductor devices which are not up to the standard in DPA;

A Galerkin-MMOCAA scheme for a semiconductor device simulation behavior of a semiconductor device;

Scanning tunneling microscopy studies on the epitaxial growth of organic semiconductors;

Based on the spin diffusion theory and the Ohm s law,we theoretically studied the spin polarized injection and transport through the ferromagnetic/organic semiconductor/ferromagnetic system and obtained the current spin polarization,which takes into account the special characteristics of organic semiconductors.

A theory for carrier concentration in physically doped organic semiconductors has been presented based on Gaussian energy distribution of the lowest unoccupied molecular orbitals (LUMOs) and the highest occupied molecular orbitals (HOMOs) as well as the Fermi - Dirac distribution of carriers in allowed quantum states.