1) ferroelectric field effect transistor memory
铁电场效应晶体管存储器
2) Ferroelectric nonvolatile memory field effect transistor (FEMFET)
铁电存储场效应晶体管(FEMFET)
3) FETS Field Effect Transistor Storage
场效应晶体管存储体
4) FFET
铁电场效应晶体管
1.
A hyperbola model of I _D- V _Gcharacteristics of ferroelectric field-effect-transistors(FFETs) with Ag/Bi_4Ti_3O_ 12gate was brought forward,which is based on the theory of MOS device and the experimental data of the FFET.
在理论分析的基础上,结合铁电材料特性及实验数据,提出了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管转换(ID-VG)特性的双曲模型并进行了数值模拟。
2.
Objective To investigate characteristics of p-channel field-effect-transistor(FFET) with Metal/ferroelectric/Metal/Insulator/Si substrates(MFMIS) structure.
目的研究金属/铁电/金属/多晶硅/绝缘层/Si衬底(MFMIS)结构的p沟道铁电场效应晶体管的性能。
5) FFETs
铁电场效应晶体管
1.
Metal-ferroelectric-semiconductor field-effect-transistors (FFETs) with Ag/Bi_4Ti_3O_ 12 /p-Si gate were fabricated using the high quality Bi_4Ti_3O_ 12 on p-Si substrates prepared by Sol-Gel technique.
在溶胶-凝胶工艺获得高质量Bi4Ti3O12薄膜的基础上,制备了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管。
6) ferroelectric field effect transistor
铁电场效应晶体管
1.
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
铁电场效应晶体管(FFET)存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
补充资料：随机存取存储器(见半导体存储器)
随机存取存储器(见半导体存储器)
random access memory,RAM
s日1}}Cunq日Ct旧choql随机存取存储器random aeeess memoryRAM)见半导体存储器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条