1) Hyperpolarizability
高阶极化率
1.
Theoretical Study of Polarizability and Hyperpolarizability of Molecule and Cluster;
分子和团簇的极化率及高阶极化率的理论研究
3) second order susceptibility
二阶极化率
1.
The mechanism of the second order susceptibility created in the fused silica by thermal/electric field poling is analyzed in detail in this paper.
详细分析了熔融石英样品经热及电场诱导后 ,建立二阶极化率的机理。
4) second-order polarizability
二阶极化率
1.
The synthesis of the second-order Nonlinear Optical (NLO) polymers is based on the chromophores with large second-order polarizability( β ).
以分子轨道理论为基础，本论文设计并合成了一系列含双羟基或多羟基的偶氮苯类有机非线性光学分子，此类分子是具有典型的D—π—A结构的生色团分子，理论上具有大的二阶极化率。
5) third-order susceptibility
三阶极化率
1.
The lowest exciton energy level and the oscillate strength of one exciton in CdS QDs are computed variationally as a function of the quantum dots radius and the third-order susceptibility of semiconductor quantum dots in non-resonant absorption region is studied.
通过变分法计算了量子点激子基态能量和偶极跃迁振子强度,分析了半导体量子点在非本征吸收区的三阶极化率。
2.
With the help of the coupling wave equations and a Hamiltonian approach,the relation between the third-order susceptibility and the nonlinear conversion coefficient is obtained.
在∧型三能级原子系统中,利用Stark啁啾快速绝热通道(Stark chirp rapid adiabatic passage,SCRAP)技术控制基态和激发态之间的粒子布居转移,采用耦合波方程和哈密顿方法得到了三阶极化率与非线性转换系数的关系。
6) third-order susceptibilities
三阶极化率
1.
The numerical calculations of the third-order susceptibilities were studied on a spherical nc-Si/SiO2 quantum dot.
在理论上计算了球形量子点激子基态能级和偶极跃迁振子强度,分析了量子点激子的三阶极化率。
2.
Under the effective mass approximation,the electron state is considered to be confined within a nc-Si/SiO2 spherical quantum dot with infinite barrier,and by using the compact density matrix method,the analytic expression for the resonant third-order susceptibilities was derived.
在有效质量近似下,采用无限深势阱,理论计算nc-Si/SiO2球形量子点导带中的电子束缚态,并利用紧束缚密度矩阵理论,推导出共振三阶极化率的表达式。
补充资料：电极化率
| 电极化率 polarizability；electric susceptibility 描述电介质极化性质的物理量。用符号χe表示，χe与相对电容率εr的关系为εr＝1＋χe。见电极化强度，电容率。 |
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条