1) quantum-well wires
量子阱线
1.
There is significant current interest in the exitonic properties and complicated exitonic properties in semiconductor quantum-well wires because of their role in optoelectronic applications.
由于半导体量子阱线中激子和复杂激子的特性在光学器件中有着重要的作用。
2) wurtzite quantum well wire
纤锌矿量子阱线
1.
Based on the dielectric continuum model and Loudon’s uniaxial crystal model,quasi-confined (QC) optical phonon modes and electron-QC phonon coupling functions in quasi-one-dimensional (Q1D) wurtzite quantum well wires (QWWs) are deduced and analyzed.
对一个Al N/GaN/Al N纤锌矿量子阱线进行了数值计算。
3) dielectric quantum well wire
介电量子阱线
4) Quantum well
量子阱
1.
Resonant modes in quantum well structure composed of photonic crystals with different lattice constants;
不同晶格常数光子晶体构成的光量子阱中的共振模
2.
Optical properties and material growth of GaAs(110) quantum wells;
GaAs(110)量子阱材料生长和光学特性
3.
Light emitting model of GaN LED quantum well;
GaN LED量子阱光发射模型
5) photonic quantum well
光量子阱
1.
Modulated photon confined states with graded-index photonic quantum well structure;
渐变折射率光量子阱对束缚态能级的调整
6) Multiple Quantum wells
多量子阱
1.
Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering;
反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析
2.
GaAs/AlGaAs(110)multiple quantum wells(MQWs)were grown by solid source molecular beam epitaxy(MBE)with a valved arsenic cracker cell.
采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构。
3.
The DR spectra of GaAs/Al 0 25 Ga 0 75 As multiple quantum wells (MQWs) samples were measured experimentally.
利用振动光束差分反射测试系统 ,获得了 Ga As/Al Ga As多量子阱材料的 DR谱 ,初步分析了 DR信号的产生机制 。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条