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1)  Spin impurity
自旋掺杂
2)  self-doped
自掺杂
1.
Base on the energy band theory,the one-dimension electronic band structures are calculated by EHMACC/CO,and the effects of different oxidized state and different alkyl chain length on its self-doped conductivity are discussed.
在能带理论的基础上,通过EHMACC/CO程序计算了一系列一维导电化合物,讨论了取代基不同形态和不同烷基链长对其自掺杂导电性能的影响。
3)  self-doping
自掺杂
1.
A Theoretical Study on Self-doping Conducting Mechanism of Substituted Polypyrrole;
取代聚吡咯自掺杂导电机理的理论研究
2.
Experiments prove that these methods can restrain self-doping and diffusion effect and avoid causing contrary epilayer,the I-V characteristics of static induction transistor manufactured by the methods are reasonable,the breakdown voltage is upgraded to 70 V and the cut v.
实验证明,该方法能有效抑制自掺杂效应和扩散效应,避免了外延过程中可能出现的反型。
4)  intrinsic doping
自然掺杂
5)  self doping
自掺杂
1.
The outward difusion in solid state,self doping in gaseous phase and self doping of the system can influence the impurities distribution in the area close to the boundary layer of the substrate across the depth.
固态外扩散、气相自掺杂和系统自掺杂影响衬底界面附近的外延层杂质浓度的深度分布。
6)  autodoping effect
自掺杂效应
补充资料:自旋-自旋弛豫


自旋-自旋弛豫


  磁共振成像术语。又称T2弛豫或横向弛豫(transverse relaxation),指垂直于外磁场B0方向的磁化矢量的指数性衰减过程。磁共振成像时,对置于外磁场B0中的自旋系统施加90°射频脉冲,则自旋系统被激励,其净磁化矢量指向与外磁场B0垂直;射频脉冲终止后,被激励的质子与邻近的原子核之间发生相互作用,逐渐失去相位,净磁化矢量指向恢复与外磁场平行,该过程称自旋-自旋弛豫。自旋-自旋弛豫过程无能量交换。
  
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