1) the edge crowding effect of emitter current
发射极电流集边效应
1.
It is an important step towards quantitative explanation of the edge crowding effect of emitter current and relative parameters in a transistor.
介绍了晶体管基区电位微分方程解析解的研究结果 ,与方程近似解相比 ,它能定量地阐释发射极电流集边效应及相关参量 ,也为功率晶体管有关教学提供更确切的理论依
2) current crowding effect
电流集边效应
1.
It is proposed that this lightly doped layer can not only function as ballasting resistors used in multi finger power HBT cells,but also reduce the emitter current crowding effect very efficiently.
通过理论计算和实验表明这种低掺杂的外延层不仅能作为镇流电阻 ,而且在功率 HBT器件中还能非常有效地降低发射极电流集边效
3) emitter-collector diffusion current
发射极集电极扩散电流
4) collector-to-emitter current gain
集电极-发射极电流增益
6) cathode efficiency
阴极[电流]效率，阴极[发射]效率
补充资料：边极
1.边缘，尽头。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条