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1)  antisite defect
反位缺陷
1.
Microscopic phase field simulation for the evolution of antisite defect of L1_2 structure and D0_(22) structure in Ni_(75) Al_(5.3) V_(19.7) alloy
微观相场法模拟Ni_(75)Al_(5.3)V_(19.7)中L1_2和D0_(22)结构反位缺陷的演化
2.
The microscopic phase-field method was employed to study the antisite defect of Ni3Al which precipitated from high Al con-centration Ni75AlxV25-x alloy.
采用微观相场法研究高Al浓度Ni75AlxV25-x合金析出相Ni3Al的反位缺陷随Al浓度增高的变化规律。
3.
Based on the microscopic phase-field dynamic diffusion equation (the Langevin equation), the effects of concentration and temperature on the antisite defect evolution in Al3Li phase are investigated.
基于离散格点形式的微扩散方程(Langevin方程),模拟了Al3Li相反位缺陷随时间的演化特征及随组元浓度、温度的变化规律。
2)  anti-site defect
反位缺陷
1.
The cell parameters and the anti-site defects are increasing with x,but ther
二、X射线精修结果表明,样品的晶体结构属于单斜晶系(a≠b≠c,β≠90°),空间群为P2_1/n,随着Ce含量的增加,晶格常数变大,反位缺陷增加,但是没有发生结构相变。
3)  antisite defects
反占位缺陷
4)  defect reaction
缺陷反应
1.
The stability and defect reactions of neutral and charged H interstitial (H i) and H vacancy (H v) in KH 2PO 4(KDP) have been studied by an ab initio method.
这些结果在原子层次上清楚地解释了实验所建议的缺陷反应机
2.
The analysis of surface effect is based on defect reaction and diffusion theory, the study for surface effect will have good guidance to the improv.
利用缺陷反应和扩散原理对表面层效应进行了初步分析,指出表面层效应的研究对改善和调节材料的电学性能具有重要的指导意义。
5)  Flaw-reflection
缺陷反射
6)  reconstluct the shape of crack
反演缺陷
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