1) magneto resistance
磁阻元件
1.
In order to detect the small current signal,this kind of electric current sensor changed the resistance of two InSb-In magneto resistance elements simultaneously,and a signal processing circuit which can enlarge its output voltage greatly was designed.
介绍了一种用InSb-In共晶体薄膜磁阻元件制成的电流传感器(MRCS)。
2.
In order to detect the small current signal,this kind of electric current sensor changed the resistance of two InSb-In magneto resistance elements simultaneously,and a signal processing cir- cuit which can enlarge its output voltage greatly was designed.
介绍了一种用 InSb-In 共晶体薄膜磁阻元件制成的电流传感器(MRCS)。
2) magnetoresistive element
磁阻传感元件
3) Small MR element
微型磁阻元件
4) Magneto-resistive effect
薄膜磁阻元件
5) spin-valve GMR
GMR巨磁阻元件
6) Semiconductor InSb magneto-resistor
半导体InSb磁阻元件
补充资料:磁阻
| 磁阻 reluctance 表征磁路中磁位降与其中磁通关系的参数,与电路中的电阻相似。其定义为 式中l为磁路的平均长度,μ为导磁材料的磁导率,S为导磁体截面。磁阻的倒数为磁导。在国际单位制(SI)中,磁阻的单位是每亨利(H-1)。 |
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条
式中l为磁路的平均长度,μ为导磁材料的磁导率,S为导磁体截面。磁阻的倒数为磁导。在国际单位制(SI)中,磁阻的单位是每亨利(H