1) High-precision benchmark voltage power
高精度基准电压源
1.
The design and make of one High-precision benchmark voltage power supply;
一种高精度基准电压源的设计制作
2) precision voltage reference
精密基准电压源
5) voltage reference
电压基准源
1.
With the trend of low-power,low-voltage in IC design,conventional bandgap voltage reference will not be the most suitable candidate any more.
设计了一种非带隙结构的电压基准源,并对该基准源作了电源抑制特性的理论分析。
2.
A CMOS voltage reference circuit operate under sub-threshold state has been presented in this paper and analysising the limitation of MOSFET when it works in sub-threshold condition.
文章设计了一种工作在亚阈值状态下的CMOS电压基准源,分析了MOSFET工作在亚阈区的电压和电流限定条件。
3.
Based on the analysis of conventional CMOS bandgap voltage reference,by combining the curvature compensation technique,a lowsupply CMOS bandgap voltage reference circuit,with the use of bulkdriven opamp as the feedback amplifier is proposed.
基于传统CMOS带隙电压基准源电路的分析,结合曲率补偿技术设计了一种带衬底驱动运算放大器的低电源电压的电压基准源电路,主体电路采用电流模式基准源结构,并结合所采用的衬底驱动运放作为基准源的负反馈运放。
6) Voltage reference
基准电压源
1.
The design of one low temperature-shift voltage reference;
一种低温漂基准电压源的设计
2.
The investigation and design of the voltage reference block on the integrated voltage stabilizer;
集成稳压器中基准电压源模块的研究与设计
3.
In order to effectively decrease the power consumption of analog integrated circuits and improve the technology compatibility,a design method of low-voltage low-power consumption voltage reference with fully CMOS configuration is presented based on the MOS transistors in sub-threshold region.
为了有效降低模拟集成电路的功耗,提高工艺兼容性,文中提出了一种全CMOS结构的低电压、低功耗基准电压源的设计方法。
补充资料：冲击高电压测量(见高电压测量)
冲击高电压测量(见高电压测量)
measurement of high impulse voltages
ch。门引才g。。dion丫日cel}o口g冲击高电压测量(rneasurement ofhighimpulsevoltages)见高电压测量。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条