1) PLD system
脉冲激光沉积系统
1.
And we study the Using method、theory basis、technology condition of making Ge thin film by the PLD system.
介绍了Ge纳米粒子的特性,及利用脉冲激光沉积系统(PLD)制备Ge纳米粒子嵌入非晶SiO2薄膜中的方法、理论依据和工艺条件及结果。
2) PLD
脉冲激光沉积
1.
Surface Morphology and Photoluminescence Properties of ZnO Films Deposited with PLD;
脉冲激光沉积ZnO薄膜的微结构及发光性能
2.
PLD Preparation and Application of TiNi SMA Thin Film;
TiNi合金薄膜的脉冲激光沉积制备与应用
3.
Microstructures and Properties of Semiconductor Materials with Pulsed Laser Deposition (PLD);
脉冲激光沉积（PLD）半导体材料结构特性的研究
3) pulse laser deposition
脉冲激光沉积
1.
Preparation of single-phase Nd_(1.85)Ce_(0.15)CuO_4 thin films by pulse laser deposition and the laser-induced thermoelectric voltage effect
脉冲激光沉积生长单相的Nd_(1.85)Ce_(0.15)CuO_4薄膜及其激光感生热电电压效应
2.
In order to study the surface emission mechanism of La2O3-Mo cathode,film cathodes were studied by using a set of equipment,specially designed for cathode research,with which film cathode can be prepared by pulse laser deposition.
为了研究镧钼阴极表面发射机制,采用专为研究阴极设计的与俄歇能谱仪相连的脉冲激光沉积装置制备薄膜阴极。
3.
Unhydrogenated diamond-like films were prepared by pulse laser deposition technique at different substrate temperature.
使用脉冲激光沉积技术制备了系列无氢类金刚石薄膜,测量了样品的Raman光谱、光吸收光谱和光致发光光谱,研究了薄膜结构和光致发光性质与制备条件的依赖关系。
4) pulsed laser deposition
脉冲激光沉积法
1.
Recent advances on ZnO-based films synthesized by pulsed laser deposition;
脉冲激光沉积法制备ZnO基薄膜研究进展
2.
The even single phase βFeSi_2 thin films were prepared by femtosecond pulsed laser deposition(PLD) on Si(111) wafers at different temperature using an FeSi_2 alloy target,and excimer(nanosecond) PLD was introduced to prepared β-FeSi_2 thin films also.
用FeSi2合金靶作为靶材,采用准分子激光沉积法在Si(111)单晶基片上制备了单相的-βFeSi2薄膜,并将飞秒脉冲激光沉积法(PLD)引入到-βFeSi2薄膜的制备工艺中;用X射线衍射仪(XRD),场扫描电镜(FSEM),能谱仪(EDS),紫外可见光光谱仪研究了薄膜的结构、组分、表面形貌和光学性能。
3.
5CoO3(LSCO) oxide thin films were realized on SrTiO3(001) substrates by pulsed laser deposition.
利用脉冲激光沉积法在STO(001)基片上外延生长了La0。
5) pulsed laser deposition
脉冲激光沉积
1.
Preparation of BCN thin films by ion beam assisted pulsed laser deposition;
离子束辅助脉冲激光沉积硼碳氮薄膜
2.
Preparation and properties of ITO thin film by pulsed laser deposition;
脉冲激光沉积法制备ITO薄膜及性质研究
3.
The application of pulsed laser deposition in producing bioactive ceramic coating;
脉冲激光沉积技术在制备生物活性陶瓷涂层中的应用
6) Pulsed Laser Deposition(PLD)
脉冲激光沉积(PLD)
1.
Porous silicon(PS) samples with different porosities were prepared by electrochemical anodization method,and ZnS films were deposited on PS substrates by pulsed laser deposition(PLD).
用电化学阳极氧化法制备了不同孔隙率的多孔硅(PS)样品,然后用脉冲激光沉积(PLD)法在其表面生长ZnS薄膜,研究ZnS/PS复合体系的结构和发光特性。
补充资料：超短脉冲激光频率转换材料
超短脉冲激光频率转换材料
materials for ultrashort pulses laser frequency conversion
超短脉冲激光频率转换材料materials forultrashort Pulses laser frequeney eonversion用于脉冲宽度从微微秒直到几十毫微微秒激光的频率转换材料。超短脉冲激光具有短的脉宽，较好的模式特性以及高的峰值功率，从而具有很强的非线性性能。经频率转换后，短波的超短脉冲可产生强的光化学反应，是探索微观世界和超高速现象的极为有用的光源。此外，采用薄片倍频材料的超短脉冲倍频，可以作为超短脉冲脉宽测量的一种简便有效的方法，在技术上有实用价值。 对超短脉冲激光频率转换材料的性能主要有以下要求:①高的光损伤闭值。由于超短脉冲的高峰值功率，因而对材料的光损伤阑值提出高的要求，一般要大于GW/cmZ。②相位匹配特性。超短脉冲在空间的尺度短到毫米及几百微米量级，短脉冲波包在材料中以群速度传播。因而，除一般的相速度匹配外，还应满足群速度匹配才能获得较高的能量转换效率。对光学均匀材料，要求基频和倍频波的折射率色散小，才能获得较好的群速度匹配。对I类匹配，群速度要求稍低;对n类匹配要求太苛刻，很难应用。由于群速度失配存在，一般器件只取亚毫米的厚度。过长的光程于能量转换无补，反而引入脉宽的展宽以及能量的损耗。③透过波段。首先要求对参与频率转换的激光波长有高的透过率。对超短脉冲应用场合，材料应有更短的紫外吸收边。其原因是吸收边会增加材料的折射率色散;远离使用波长的吸收边，可使材料获得较好的群速度匹配。 钱激光超短脉冲频率转换的常用材料是磷酸二氢钾(KDP)类晶体。此外，新开发的三硼酸锉(LBO)晶体，由于其高的抗光损伤阑值、好的紫外透过率以及小的色散，也是好的超短脉冲频率转换用材料。有机晶体精氨酸磷酸盐(LAP)和氛化精氨酸磷酸盐(D一LAP)也可用作超短脉冲频率转换用材料。 (邵宗书)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条