1) metal vapor vacuum are ion deposition
磁过滤等离子沉积
2) filtered arc cathodic plasma deposition
磁过滤等离子体沉积
3) filtered cathodic arc plasma
磁过滤等离子体
1.
Cu-doped diamond-like carbon(DLC) nanodot arrays with excellent field emitting properties were fabricated on the AAO template by the filtered cathodic arc plasma technique.
利用磁过滤等离子体结合氧化铝模板(AA0)技术在室温下制备了具有优异场发射性能的铜掺杂类金刚石(DLC)纳米点阵列。
2.
The high quality DLC films were successfully deposited on the surface of silicon substrates at room temperature by the filtered cathodic arc plasma(FCAP) equipment.
利用自行研制的磁过滤等离子体技术(FCAP),并创造性地对衬底施加低频率周期性负偏压,在室温下的单晶硅表面上制备了高质量的非晶金刚石薄膜。
3.
Nano-structure TiN thin films were deposited on silicon substrate at room temperature using filtered cathodic arc plasma (FCAP) system.
在室温条件下,用磁过滤等离子体装置在单晶硅基底上制备了纳米结构TiN薄膜。
4) magnetron sputtering plasma
等离子体磁控溅射沉积
5) filtered cathodic arc plasma
磁过滤阴极弧等离子体
1.
Titanium nitride coatings were deposited on unheated stainless steel substrate and stainless steel substrate heated to 400 ℃ by filtered cathodic arc plasma deposition (FCAP) and direct current magnetron sputtering deposition (DCSP), respectively.
分别利用磁过滤阴极弧等离子体沉积装置和直流磁控溅射装置在不锈钢基底上制备了 Ti N涂层 ,采用 X射线光电子能谱仪、X射线衍射仪和扫描电子显微镜对涂层的结构及形貌进行了表征 ;利用纳米压痕仪测定了涂层的硬度 ;在 DF- PM型动摩擦系数精密测定仪上考察了涂层的摩擦学性能 。
2.
This thesis focused on the preparation of amorphous carbon nanotip arrays for excellent field emission cathode material by a unique combination of the anodic aluminum oxide (AAO) template and filtered cathodic arc plasma (FCAP) technology.
本论文以磁过滤阴极弧等离子体技术结合阳极氧化铝模板制备冷阴极场发射材料非晶碳纳米尖点阵列膜为重点,分别对阳极氧化铝模板的制备工艺、模板孔径大小和孔道开口形状的准确控制及其性能进行了研究探讨,对非晶碳纳米尖点阵列的制备技术、性能进行了较为深入详细的分析探讨。
6) arc-glow plasma depositing
弧辉等离子沉积
1.
TiN film has been deposited on AZ91D magnesium alloy by arc-glow plasma depositing in order to improve its antiwear performance.
采用弧辉等离子沉积工艺在镁合金AZ91表面涂覆了TiN薄膜。
2.
In this study, a 2 μm thick coating with 12 sub-layers of CrN and TiN is deposited alternately on the surface of magnesium alloy AZ91 by a novel method of arc-glow plasma depositing to improve its wear resistance.
为改进其耐磨性,采用弧辉等离子沉积的新工艺在镁合金 AZ91 表面涂覆 TiN/CrN 多层薄膜。
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条