1) resonant defect state
共振缺陷态
1.
At the same time, a resonant defect state was found for the first time.
在100K条件下测量了p型InSb MOS器件的变频电容-电压(C-V)谱,在反型区观察到第二子带填充电子的台阶效应,还发现一个位于导带中的共振缺陷态。
2) resonance imprisonment
共振陷禁
3) defect state
缺陷态
1.
Acoustic band gaps and defect states in two-dimensional composite materials;
二维周期性复合介质中声波带隙结构及其缺陷态
2.
Based upon them, we found that the eigenfrequency of defect state is red-shifted with the increasing geometry thickness of defect layer in right-handed materials.
给出了描述掺杂的一维光子晶体结构缺陷态的变化规律及其空间局域度特性的理论表达式。
3.
The defect state was formed by introducing the defect layer into period structure.
通过对光子晶体透射谱的研究,讨论了不同周期数和不同介电常数比对光子晶体带隙的影响,最后通过在周期介质层状结构中引入缺陷层构造了光子缺陷态。
4) defect states
缺陷态
1.
The defect states in two-dimensional phononic crystal homogeneity dislocation structures has been studied by means of the plane-wave expansion method in combination with a supercell technique.
利用平面波展开法结合超原胞的方法研究了二维声子晶体同质位错结的缺陷态。
2.
Made some scientific research on the electronic radiation defect states isochronal and isothermal anneling characteristic properties of high resistance (80 ̄110Ω·cm) NTD FZ Si P +n in vacuum,and obtain five defect energy evels.
本文研究了高阻(80~110Ω·cm)NTD-FZ-Si-P+n结中经电子辐照缺陷态在真空条件下的等时、等温退火特性,获得了5个缺陷能级,结果表明其中E3,E4能级是主要的复合中心。
3.
UV laserinduced damage threshold in fused silica was theoretically investigated based on the model that the conduction band electrons were produced from defect states via linear absorption and from valence band via twophoton absorption.
提出了缺陷态电子的光吸收和价电子的双光子吸收是石英玻璃在紫外光激光照射下产生导带电子的两种重要机制的观点。
5) Defect mode
缺陷态
1.
The frequencies of defect modes are dependent on the rod radius (r_2) of square lattice with a larger periodic constant, and the relationship of the defect modes and r_2 is almost independent of a_2.
并发现当a2<5a时,缺陷态明显地随入射角度变化。
6) defect modes
多缺陷态
补充资料:共振态
| 共振态 resonance 通过强相互作用衰变的粒子。原来把它们看成是一些粒子的共振态,这些共振态的平均寿命为10-24~10-20秒;后来弄清楚寿命如此之短是强作用衰变的特征,因此它们和强子属于同一层次,是通过强作用衰变的不稳定的强子。它可分为重子共振态和介子共振态两类。这种不稳定强子的数量相当多,还处在不断的发现中,数量超过700种。 |
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参考词条