2) AlGaN detector
AlGaN探测器
3) UV detector
紫外探测器
1.
GaN-based visible-blind UV detector and its research progress;
GaN基可见盲紫外探测器及其研究进展
2.
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响
3.
Recently,ZnO has been regarded as promising materials for UV detectors due to its predominant optical and electrical properties.
近年来,ZnO基紫外探测器由于其优异的光电特性,已成为紫外探测领域研究中的新热点之一。
5) ultraviolet photodetector
紫外探测器
1.
Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors;
p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响
2.
A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector;
一种减小GaN基肖特基结构紫外探测器暗电流的方法
3.
A new Schottky barrier structure of GaN-based ultraviolet photodetector;
一种新型GaN基肖特基结构紫外探测器
6) ultraviolet detectors
紫外探测器
1.
Analysis of model and fabrication of AlGaN based PIN ultraviolet detectors;
AlGaN PIN结构紫外探测器研制和建模分析
2.
The basic mechanisms and developments of ultraviolet detectors have been described in this paper.
本文主要介绍了紫外探测器的原理和研究现状。
3.
The AlxGal-XN semiconductor materials were widely used in many fields,such as in the process of ultraviolet detectors.
Al_xGa_(1-x)N半导体材料有着广泛的用途,其中之一是在紫外探测器制作中的应用。
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1.犹世外。
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