Accelerators simulation experiment on single event effects in semiconductor devices;

In order to improve the forward conduction characteristics of silicon semiconductor devices, a comprehensive study of the influences of boron diffusion, phosphorous diffusion, doping concentration distribution in P~+-P region of sintered Al-Mo electrode and the minority carrier life on the forward conduction characteristics is performed.

They have extensive application prospect in fields such as high brightness light emitting diodes,short wavelength laser diodes,high performance UV detector,and high temperature,high frequency,large power semiconductor devices.

Simulation & Analysis of a Hydrodynamic Model of Semiconductor Devices by a Finite Element Method;

Research for incompetent sources of semiconductor devices which are not up to the standard in DPA;

A Galerkin-MMOCAA scheme for a semiconductor device simulation behavior of a semiconductor device;

The Failure of PEM Caused by the Mismatch of CTE;

PEMs are reputed to offer significant cost,availability,size and weight advantages,but someone still focuses on reliability issues.

Based on this, high accelerate stress test (HAST) were done to evaluate the reliability of PEM devices, the proposal from Goddard center of NASA which screen the high reliability PEM devices were introduced.

With the persistent improvements in quality and reliability, the application of plastic encapsulated microcircuits (PEM) became more widespread, even including the military field.