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1)  modulator structure
调制器结构
1.
Considering the modulator structure and the noise of circuits, the non-ideal system model for second-order low-pass and band-pass sigma-delta modulator were founded.
结合调制器结构参数和电路噪声参数,建立了二阶低通型和二阶带通型过采样Sigma-Delta模数转换器调制器的非理想系统模型,并对调制器的功率谱密度图和信噪比进行仿真,验证了建模方法的正确性。
2)  modulated structure
调制结构
1.
The TEM images show there were two meta-stable structures which were modulated structures at early stage of aging.
56Cr合金粉末并对其于500℃进行了时效,用高分辨电镜观察了其不同时效阶段的结构,并于时效的前期阶段观察到了两种亚稳结构且均为调制结构。
2.
General definitions related to modulated structure such as main reflection, satellite reflection, basic average and structure are explained in fairly detail.
系统地描述了调制结构的一些基本概念,如卫星反射和主反射,基结构和平均结构。
3.
This paper gives a brief discussion of three problems related to the inter disciplinary aspects of mineralogy: (1) The relationship between the external forms and internal microscopic structures of crystals is traced historically, with special emphasis on calaverite whose indexing difficulty leads to incommensurately modulated structure, a kind of quasiperiodic structure.
扼要地综述了物理学、材料科学与矿物学学科交叉有关的问题 :( 1)回顾了晶体学发展的历史、阐述了晶体外形与内部微观结构之间的关系 ,重点讨论了碲金矿晶面指标化遭遇的困难 ,和在引入无公度调制结构 (一种准周期结构 )后 ,这一难题的解决 。
3)  Modulation Structure
调制结构
1.
The abnormal effects of physical and mechanical properties of nano@P2multilayers result from their modulation structure.
纳米多层膜的物理性能和力学性能的异常效应均与其调制结构有关。
2.
X ray diffraction analysis (XRD), transmission electron microscope (TEM) and microhardness tester were employed to characterize the modulation structure, interface structure and microhardness of these multilayers.
采用反应溅射法制备了一系列不同调制周期的 Ti N/Nb N纳米多层膜 ,并使用 X射线衍射分析 ( XRD)、透射电子显微镜 ( TEM)和显微硬度计表征了薄膜的调制结构、界面结构和显微硬度 。
3.
The modulation structure and modulation interface of W/SiC nanometer multiayers, which are prepared with multi target magnetron sputtering system, were characterized by XRD and HREM.
W/Si C纳米多层膜的调制结构界面平直、清晰、周期性好 ,而在原子尺度上 ,界面存在一个成分混合和结构调整的过渡
4)  structure modulation
结构调制
1.
The influence of structure modulation on field emission proper
本论文针对当前薄膜型场发射冷阴极研究的热点问题——如何提高场发射电流密度并降低阈值电压,分别从厚度、表面以及结构调制的角度,研究各种因素对其场发射性能的影响。
5)  VSUPCC
变结构预估协调控制器
6)  reticle configuration
调制盘结构
补充资料:MnSi_(2)~χ中的调制结构


MnSi_(2)~χ中的调制结构


  —M—nSi 2~,中的询制结构 中岛科学院仓璃矸究所供稿
  
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