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1)  Biasing Co-emitting Amplifying Circuit
偏置放大电路
2)  preamplifier circuit
前置放大电路
1.
Based on the design principles of low-noise circuit,a preamplifier circuit structure of nuclear magnetic resonance logging tools was presented.
基于低噪声电路设计原则,给出了一种用于核磁共振测井仪的前置放大电路。
2.
A preamplifier circuit is also developed,it is applied for amplifying tiny(several millivolt),wide frequency bandwidth(1 K~10 MHz) signals.
采用铁磁纳米复合材料制作罗戈夫斯基线圈的磁芯,研制了具有最优幅频特性的宽频带脉冲电流传感器,用于测量变压器局部放电信号;并设计了一种前置放大电路,适用于对微小(几个毫伏)、宽频带(1 K~10MHz)的局放信号的放大。
3.
This filter is used in preamplifier circuit.
介绍了LTC1562的结构及特点,给出了利用F literCAD软件设计的八阶Butterworth有源带通滤波器应用在前置放大电路中的例子。
3)  preamplifier [英][pri:'æmplə,faiə]  [美][pri'æmplə,faɪɚ]
前置放大电路
1.
The design of preamplifier circuit based on weak signal detection
微弱信号检测的前置放大电路设计
2.
The common preamplifiers for the signals of Lidar are not effective as expected,because they have the problem of parameter mismatching with a special Lidar system.
文中采用光电倍增管前置放大电路的工作原理,进行噪声分析;结合实际的激光雷达参数,设计1种大带宽,增益稳定的光电倍增管前置放大电路。
4)  pre-amplifier circuit
前置放大电路
1.
So the pre-amplifier circuit must be designed minutely.
过套管电阻率测井响应信号极其微弱,对前置放大电路的设计要求极高。
5)  bias circuit
偏置电路
1.
This paper proposes a bias circuit for cascode current mirror in band-gap voltage reference to realize low supply voltage.
通过设计带隙基准电压源中共源共栅电流镜的偏置电路以实现低电源电压工作。
2.
The physical performance can be understood explicitly in the equivalent networks,and the judgement of stability functions of every bias circuit could be simply gained.
本文给出了求出典型放大器偏置电路的戴维南等效电路,依此等效电路可直接看清电路工作时的物理意义,进一步判定各个放大电路静态工作点稳定性能的优劣。
3.
This paper analyses the quiescent point Q of base electrod potentiometer bias circuit which is evaluted by method of traditional double batteries,and gives a condition which is engineering approximately estimate quiescent point Q of base electrode potentiometer bias circuit.
本文通过传统的双电池法对基极分压式偏置电路静态工作点Q求解过程的分析,给出了工程估算法估算基极分压式偏置电路静态工作点Q的条件。
6)  biasing circuit
偏置电路
1.
In this article,we ll present the appli- cation of ku-band GaAs power FET,design of biasing circuit of FET and how to avoid the the self-excitation of power FET.
本篇文章的主要内容是介绍ku-band大功率放大器应用、防自激问题、功放偏置电路设计。
补充资料:超大规模集成电路
分子式:
CAS号:

性质:它是大规模集成电路的集成度不断提高而出现的新概念,一般认为,集成度达1万个门电路或10万个元件以上的大规模集成电路,称为超大规模集成电路,即集成度为256K;线宽尺寸为1.2~1.5μm。它的最显著的特点是具有整机功能。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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