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1)  Honeycomb Defect
蜂洞缺陷
1.
Effect of SLS Processing Parameters on Curl Deformation and Honeycomb Defects of Specimen in Composite Wax Powder;
复合蜡粉激光选区烧结参数对试样翘曲变形和底面蜂洞缺陷的影响
2)  pore defect
孔洞缺陷
1.
In allusion to leakage blockage method by sticking of pore defect, the calculation process of toughness stress strength factor in the glue interface is given through the bulge test model analysis, and the critical bulge radius of split crack inter-cohesion break of epoxy resin glue is evaluated by means of brittle break criterion of break mechanics.
针对孔洞缺陷的粘贴堵漏法 ,通过鼓包试验模型分析 ,给出了胶粘剂界面韧性应力强度因子的计算过程 ,利用断裂力学中的脆性断裂准则估算了环氧树脂胶粘剂劈裂内聚破坏的临界鼓包半
3)  hole lacuna
孔洞缺陷
1.
We firstly explained that the electromagnetic wave emitted from the source under the condition of far field is approximately the plane wave, which vertically downwards; and then under the condition of far field, we detail in studied the CSAMT response characteristics when there are different types of the hole lacuna in depth, in size, in shape, in silting (mud silting.
我们首先说明了在远场条件下由场源发出的电磁波近似是垂直向下的平面波 ;然后在远场条件下 ,详细研究了当防渗心墙上有各种不同深度、不同大小、不同形状、不同充填 (充填泥土或空气 )的孔洞缺陷时的CSAMT响应特点 ,并从中总结得到了若干结
4)  cavity defect
空洞缺陷
1.
Neutron testing method for detecting cavity defect of pour concrete under steel plate lining;
钢板下浇注混凝土空洞缺陷中子探查新技术
5)  void-type defects
空洞型缺陷
1.
At the same time,the effect of hydrogen annealing on the reduction of void-type defects in CZ silicon is also summar,zed.
总结了氢对直拉硅(CZ)单晶中缺陷影响的研究进展,主要介绍了氢促进氧扩散、热施主和氧沉淀生成,以及高温氢气退火促进直拉硅片空洞型缺陷消除的机理,其中氢促进硅中氧的扩散被认为是氢对直拉硅中的缺陷产生影响的主要原因。
2.
Its’ still in dispute that whether the flow pattern defects(FPDs) are void-type defects.
CZ-Si单晶中的流动图形缺陷(FPDs)是否属于空洞型缺陷,目前尚有争议。
6)  void defects
空洞型缺陷
1.
The magnetic field technology that pulls large diameter single-crystal silicon, the control and utilization of defects in the silicon wafer, the grown-in void defects in large diameter single-crystal silicon, the silicon epitaxial wafer and SOI wafer, the analog computation of the growth of large diameter single-crystal silicon and solar cell single-crystal silicon and the research about phys.
对大直径生长用磁场拉晶技术;硅片中缺陷的控制与利用(缺陷工程);大直径硅中新型原生空洞型缺陷;硅外延片与SOI片;太阳电池级硅和大直径直拉硅单晶生长的计算机模拟;硅熔体的物性研究等均进行了论述。
补充资料:点缺陷(见晶体缺陷)


点缺陷(见晶体缺陷)
point defect

  点缺陷point defeet见晶体缺陷。
  
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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