1) Al distribution
Al组份分布
2) composite distribution
组份分布
3) Al ordering
Si、Al分布
4) Al-Si distribution
Al-Si分布
5) high Al contents
高Al组分
1.
Based on the feature of alloying among dual metals and Ti/Al easily oxidized at RTP condition,by depositing a Ti/Al/Ti/Au layer structure on high Al contents N-AlxGa1-xN(x≥0.
基于各层金属间在快速热退火时容易合金化及Ti,Al易被氧化的特点,在高Al组分N-AlxGa1-xN(x≥0。
6) Al composition
Al组分
1.
In the case of no determination of Al composition and p-doping density in MOCVD epitaxy of AlGaInP double heterostructure light emitting diodes,the relation of Al composition and luminescent efficiency is gotten under various p-doping density by analyzing carrier transportion in double heterojunction of LED,and the principle of doping density and Al composition vs.
在AlGaInP四元系双异质结发光二极管 (DH LED)的材料生长过程中 ,限制层的Al组分与p型掺杂浓度的确定有较大的随意性 ,这对LED的发光不利。
2.
In the case of no determination of Al composition on blocking layer,the authors have proved there is an optimum Al composition on occasions of various p-doping so that carriers in undoped layer would recombine on the largest scale by analyzing their transportion in double heterojunction.
在双异质结发光二极管(DH-LED)实际材料生长过程中,它的限制层的Al组分的确定有较大的随意性。
3.
In the case of no determination of Al composition on blocking layer, this paper has proved that there is an optimum Al composition so that carriers in undoped layer would recombine on the largest scale by analyzing their transportion in double heterojunction.
鉴于双异质结发光二极管(DH—LED)限制层的Al组分的不确定性,本文通过分析载流子在双异质结中的输运及受约束情况,从理论上剖析了Al组分确定为一个最合适的取值时,有源层中的载流子应有一个最大数量的复合,此时LED的复合效率最高、发光最强。
补充资料：份份
1.彬彬。文质兼备貌。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条