1) Two carriers
双载流子
2) double-carrier four-trap model
双载流子四陷阱模型
3) carrier
[英]['kæriə(r)] [美]['kærɪɚ]
载流子
1.
New method of calculating the probability function of carriers occupying the impurity level;
一种计算载流子占据杂质能级的概率的新方法
2.
The Summary on Methods of Carrier Mobility Measuring
载流子迁移率测量方法总结
3.
The Grid Voltage Effect in Carrier Injection of Organic Field-effect Transistor
栅压对有机薄膜场效应晶体管中载流子注入的影响
4) charge carrier
载流子
1.
Measurement of the charge carrier mobility of polymer with the time-of-flight technique;
渡越时间方法测量聚合物材料的载流子迁移率
2.
These photo generated excitons can be dissociated into free charge carriers by built in field at the organi.
在实验工作的基础上，提出双层ｐ－ｎ异质结有机太阳电池中激子和载流子输运的理论模型。
3.
Steady condition and law of conservation of momentum are used to explain that total directional movement momentum of all charge carriers through arbitrary intersecting surface is conservative; the energy state of carriers in the superconducting thin film is compared with that in exterior surface layer of normal conductor, superconducting proximity effect is explained by the above two results.
运用稳恒条件和动量守恒定律说明了稳恒电路中,穿过任意横截面的全部载流子的定向运动总动量在数值上是守恒的;比较了超导薄膜中和正常导体的外表面层中载流子的能态,用以上的两个结果解释了超导“邻近效应”。
5) carriers
[英]['kæriə] [美]['kærɪɚ]
载流子
1.
Under the influence of semiconductor carriers, within certain frequencies, along the direction of propagation perpendicular to the external magnetic field, magnetostatic surface wave can develop into magnetostatic solitons, with the group velocity and phase velocity being opposite to each other, and the magnitude of the velocity changes with the carriers density.
铁磁膜近邻存在半导体载流子的影响下 ,静磁表面波在一定频率范围内与外加恒磁场相垂直的传播方向上能演化成静磁孤子 ,而且静磁表面波群速在一定频率范围会改变运动方向成为反向波 ,其大小受载流子浓度的影
2.
The holes injection and transport of the devices were controlled by adjusting doping concentration of 4F-TCNQ for good balance of carriers.
研究了传输层的单载流子器件行为,同时,由于注入的电子和空穴数量偏离平衡,器件的整体效率也会受到影响,在实验中通过调节4F-TCNQ的质量百分比,来调控空穴的注入和传输,使载流子达到了较好的平衡。
6) carrier number
载流子数
1.
This paper models the carrier number in silicon semiconductor using the method of grand canonical ensemble and Fermi-Dirac statistical distributions.
将巨正则系综的Fermi-Dirac(F-D)统计法与计算机模拟相结合,从本征半导体硅出发,探讨温度和光照能量对载流子数的影响,试图从理论上定量分析太阳能电池工作状况,对本征硅半导体中载流子数进行计算机模拟,模拟结果与理论规律基本吻合,此方法可为进一步研究掺杂半导体及氧化物半导体空间电荷层载流子数提供参考。
补充资料：2,2-双氯甲基-三亚甲基-双[双(2-氯乙基)磷酸脂]
CAS：38051-10-4
分子式：C13H24Cl6O8P2
中文名称：2,2-双氯甲基-三亚甲基-双[双(2-氯乙基)磷酸脂]
英文名称：2,2- bis(chloromethyl)-trimethylene bis[bis(2-chloroethyl)phosphate]
phosphoric acid, 2,2-bis(chloromethyl)-1,3-propanediyl tetrakis(2-chloroethyl)
2,2-bis(chloromethyl)trimethylene bis(bis(2-chloroethyl)phosphate)
2,2-bis(chloromethyl)-1,3-propanediyltetrakis(2-chloroethyl)phosphate
分子式：C13H24Cl6O8P2
中文名称：2,2-双氯甲基-三亚甲基-双[双(2-氯乙基)磷酸脂]
英文名称：2,2- bis(chloromethyl)-trimethylene bis[bis(2-chloroethyl)phosphate]
phosphoric acid, 2,2-bis(chloromethyl)-1,3-propanediyl tetrakis(2-chloroethyl)
2,2-bis(chloromethyl)trimethylene bis(bis(2-chloroethyl)phosphate)
2,2-bis(chloromethyl)-1,3-propanediyltetrakis(2-chloroethyl)phosphate
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条