1) nickel doped zinc oxide semiconductor
掺镍氧化锌半导体
2) doped oxide semiconductors
掺杂氧化物半导体
1.
The stealth mechanism and present situation of several infrared/radar compatible stealth materials, such as conducting polymers, nano-materials, doped oxide semiconductors and composite multispectral stealth materials are also reviewed in detail.
阐述了实现红外与雷达隐身兼容的技术途径,综述了导电高聚物、纳米材料、掺杂氧化物半导体和复合型多波段隐身材料等红外/雷达兼容隐身材料的隐身原理和研究现状,并指出了红外/雷达兼容隐身材料的发展趋势。
3) Zinc Oxide-based Diluted Magnetic Semiconductors
氧化锌基稀磁半导体
4) Ni-doped Mn-Zn ferrite
镍掺杂锰锌铁氧体
5) zinc oxide/tin dioxide composite semiconductor
氧化锌氧化锡复合半导体
6) ZAO conductive film
ZAO(掺铝氧化锌)导电膜
补充资料：半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以，v:‘，_‘ 一J一“。，瓜米早伙鼓幕由乌教着给话_
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条