1) subjective limitation
主体缺陷
1.
Based on the perspectives of Behavior Finance and Information Economics,this article analyzes the general mechanism formation of insecurity in bank loans by presenting and clarifying the five aspects of subjective limitation,objective limitation,asymmetrical information,patterns of finance,and economic environment.
以行为金融学和信息经济学的视角,分别从银行体系的主体缺陷、客体缺陷、信息不对称、金融制度、经济环境五方面分析银行信贷资产非安全性的一般生成机理。
2) acceptor-type defect
受主缺陷
1.
It is likely that the sulfur passivation process reduces and the ratio of , where is the concentration of donor-type defects and is the concentration of acceptor-type defects .
本文分析了硫钝化后GaAsMESFET饱和源漏电流(IDss)下降的原因,认为硫处理降低了和/(为施主缺陷密度;为受主缺陷密度),表面费米能级向价带顶移动,能带弯曲加剧,表面耗尽层变厚,导电沟道变窄,是导致饱和源漏电流下降的主要因素。
3) main blemishes
主要缺陷
1.
The paper studies the main blemishes of various deposit-insurance systems in foreign countries and proposes the improvement countermeasures in China in order to effectively establish a deposit-insurance system with Chinese characteristics.
文章研究了国外存款保险制度的主要缺陷 ,并根据我国实际情况提出改进对策 ,以期有助于创建有中国特色的存款保险制度。
4) crystal defect
晶体缺陷
1.
Studies of characteristics of crystal defects in diamond synthesized under different conditions;
不同生长条件下合成的金刚石晶体缺陷的特征研究
2.
Researching crystal defects with atomic force microscope;
利用原子力显微镜研究晶体缺陷
3.
The main type of crystal defects in this sample are dislocations, and some of them belong to the Frank type.
利用同步辐射X射线对人造金刚石晶体缺陷进行了形貌学研究,实验采用了透射 (劳埃 )形貌术和反射形貌术两种方法。
5) crystal defects
晶体缺陷
1.
Experimental method for reseaching crystal defects with synchrotron radiation topography;
利用同步辐射形貌术研究晶体缺陷的实验方法探讨
2.
The mechanism of the formation of mullite solid solutions was discussed from the viewpoint of crystal defects, and the detailed defects formula and reaction equations were given.
从晶体缺陷的角度探讨了莫来石Al4+2xSi2-2xO10-x的形成机理,并给出了缺陷表达式及缺陷反应方程式。
3.
Based on the new ternary infrared detection materials, Hg1-xZnxTe and Hg1-xMnxTe, and the substrates for Ⅱ -Ⅵ compound film epitaxy, CdTe and Cd1-xZnxTe, the researches on the appliction, crystal growth techniques and the crystal defects of Ⅱ -Ⅵ compounds are reviewed.
以新型红外探测材料Hg_(1-x)Zn_xTe、Hg_(1-x)Mn_xTe及外延衬底材料CdTe及Cd_(1-x)Zn_xTe为代表分析了Ⅱ-Ⅵ族化合物光电子材料的应用背景与现状、晶体生长方法,晶体生长过程中的主要理论问题及各种晶体缺陷的形成与控制。
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条