1) Vrmlpad 2.1
Vrmlpad2.1
2) A_S/V_r ratio
AS/Vr比
1.
The influence of various precursors, residence time of the precursor, initial A_S/V_r ratio, partial pressure of the precursor, infiltration temperature and the role of hydrogen on rapid and uniform densification in ICVI process are reviewed respectively.
综述了在等温、等压化学气相沉积(ICVI)工艺中前驱体种类、滞留时间(τ)、AS/Vr比、前驱体分压、沉积温度以及H2在热解炭沉积中的作用对C/C复合材料快速均匀致密化的影响,重点讨论了前驱体滞留时间(τ)的精确控制对ICVI的影响。
3) VR strain
VR株
4) VR-tree
VR树
1.
In this paper a new index structure VR-tree is presented,which combines the advantage of Voronoi diagram in .
本文把传统的R树和Voronoi图在解决最近邻查询问题中的优越性相结合,提出了一种新的索引结构:VR树。
5) voltage-requlator tube
VR管
补充资料：下比
1.谓庇护坏人。比，勾结，庇护。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条