1) heterojunctlon device
GeSi异质结器件
2) GeSi heterojunction
GeSi异质结
3) GeSi/Si heterojunction
GeSi/Si异质结
1.
GeSi/Si heterojunction single-mode coplanar Bragg reflection grating is an important optoelectronic integrated device in silicon based optoelectronic integrated circuits(OEIC).
GeSi/Si异质结布拉格反射光栅是硅基光电集成领域一种重要的集成光学器件,分析GeSi/Si异质结的传光特性和布拉格条件,通过求解布拉格光栅方程,得出耦合系数和耦合效率。
2.
3μm GeSi/Si heterojunction waveguide grating coupler is approximately designed.
3μm GeSi/Si异质结波导光栅耦合器波导层的厚度、槽形、长度、宽度、周期、槽深等做了近似的设计。
3.
Because the band offset on GeSi/Si heterojunction mainly occurs beween valence bands of GeSi and Si(ΔEv>ΔEc)and the potential well for electron is more shallow than that for hole,it is suitable for hole type RTD.
着重讨论了后两种GeSi/Si基RTD结构;指出GeSi/Si异质结的能带偏差主要发生在二者价带之间(即ΔEv>ΔEc),形成的电子势阱很浅,因此适用于空穴型RTD的研制;n型带内RTD只有通过应力Si或应力GeSi来实现,这种应力型RTD为带内RTD的主要结构;而带间GeSi/SiRITD则将成为更有应用前景的、性能较好的GeSi/SiRTD器件结构。
4) GeSi hetro-structure
GeSi异质结构
5) heterojunction device
异质结器件
1.
Based on double layer(DL) device: ITO/N,N -Diphenyl-N,N -bis(1-naphthyl)-(1,1 -biphenyl)-4,4 -diamine(NPB)/tri(8-hydroxyquinoline) aluminum(Alq_3)/(Mg∶Ag,)recombination sites of carriers in DL heterojunction device have been studied by using red dopant 4-(dicyanomethylene)-2-t-butyl6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-.
以双层器件ITO/N,N-’Diphenyl-N,N-’bis(1-naphthyl)-(1,1-’biphenyl)-4,4-’diamine(NPB)/tri-(8-hydroxy-quinoline)-aluminum(Alq3)/Mg∶Ag为基础,以红光掺杂剂4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran(DCJTB)为探针,通过改变在Alq3层中掺杂层的厚度,研究了双层异质结器件中载流子的复合位置。
6) heterojunction organic light-emitting device
异质结有机发光器件
1.
The heterojunction organic light-emitting devices(OLEDs) with the Al,Mg∶Ag alloy and LiF-Al composite layer as cathodes are fabricated by the vacuum sublimation technique,and the influence of the cathode materials on the interfacial charge accumulation are investigated.
采用金属A l、合金Mg∶Ag以及复合层LiF-A l作为阴极材料,利用真空加热蒸镀法制备了异质结有机发光器件(OLED),研究了阴极材料与器件有机层界面电荷聚集之间的关系。
补充资料：结好
1.交结;亲近。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条