1) two fold heterojunction
异质二重结
2) heterojunction diode
异质结二极管
1.
Research advances in electronic devices and photoelectricity transition devices such as tunneling diode, heterojunction diode, varied capacitance diode, single electronic transistor, solar cell and light emitting diode(LED)using hydrogenated nano-crystalline silicon(nc-Si:H)films are reviewed in this paper.
介绍了氢化纳米硅(nc-Si∶H)薄膜在电子学器件和光电转换器件(如隧道二极管、异质结二极管、变容二极管、单电子晶体管、太阳能电池、发光二极管)等方面的研究进展,分析了这些器件的性能与nc-Si∶H薄膜结构之间的关系,阐述了新型器件的优点。
2.
Under light illumination,the ZnO/Si heterojunction diode presented a remarkable photocurrent effect.
光照时,ZnO/Si异质结二极管呈明显的光生电流效应。
3) two-dimensional heterostructure
二维异质结构
1.
New dynamic current collapse and two-dimensional heterostructure concepts are proposed,where in situ deposition of a Si3N4 surface layer is combined with the compound barrier to implement the two-dimensional heterostructure.
提出了新的动态电流崩塌模型和二维异质结构概念,把原位Si3N4钝化和复合势垒结合起来实现二维异质结构。
2.
A two-dimensional heterostructure was designed according to the different requirements of inner channel,outer channel and ohmic contact barriers.
依据内沟道、外沟道和欧姆接触对势垒的不同要求设计出二维异质结构。
4) heterostructures of two-dimensional photonic crystal
二维光子晶体异质结
5) SiGeC/Si heterojunction power diodes
SiGeC/Si异质结功率二极管
补充资料:重结
1.谓郁结之甚。 2.重新缔结。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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