1) dopant activation
掺杂激活率
1.
Increased dopant activation in ion-implanted Si is investigated by means of ion beam defer engineering.
研究了运用离子束缺陷工程提高离子注入Si中掺杂激活率的新方法。
2) laser doping
激光掺杂
1.
They include laser doping, laser annealing, laser depositing film, solid-phase reaction induced by laser and laser photolithograph.
这些应用大致涵盖激光掺杂、激光退火、激光沉积薄膜、激光引发固相反应和激光光刻等几方面。
2.
The application of laser thermal effects, laser doping and laser firing, in high efficiency solar cell fabrication is summarized.
综述了激光热效应在高效太阳电池制造中的应用,如激光掺杂和激光烧结工艺;介绍了这两种工艺的具体典型实例:激光掺杂有选择性发射结太阳电池、激光掺杂半导体指栅太阳电池、激光烧结电极太阳电池等。
3) doping extent
掺杂率
1.
The effects of dosages of oxidant and doping agent on doping extent and conductivity of PAn were studied.
研究了氧化剂和掺杂剂用量对PAn掺杂率和电导率性能的影响;并采用红外光谱、X射线衍射、粒径分析、腐蚀电位曲线表征了PAn结构与性能的关系。
4) doping efficiency
掺杂效率
1.
A new method to analyze the phosphours-doping efficiency was proposed.
介绍一种分析ａ－Ｓｉ掺杂效率的新方法。
2.
By measuring the annealing temperature and annealing time dependences of the dark conductivities of doped a-Si : H and a-SiC : H films, we have investigated the infiuences of annealing temperature on the doping efficiency and on the reactivation process of the dopant.
本文通过测量掺杂ａ－Ｓｉ：Ｈ和ａ－Ｓｉｃ：Ｈ薄膜的电导率随退火温度和退火时间变化研究了温度对掺杂效率的影响以及杂质激活的微观过程。
5) dopant activation
掺杂剂活化
6) doping ratio
掺杂剂比率
补充资料：电导率(见电阻率)
电导率(见电阻率)
conductivity
d!日nd日O}已电导率(eonduetivity)见电阻率。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条