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1)  the third order hyperpolarizability coefficient
三阶超极化系数
2)  3rd-order-hyperpolarizability
三阶超极化率
3)  third_order hyperpolarizability γ
三阶分子超极化率γ
4)  third-order nonlinear optical hyperpolarizability
三阶非线性超极化率
1.
The third-order nonlinear optical hyperpolarizability γ(3) was obtained by Z scan technique with picosecond laser.
44ns,利用皮秒激光光源,采用Z扫描技术测定了分子1的三阶非线性超极化率γ(3)为6。
5)  third-order susceptibility
三阶极化率
1.
The lowest exciton energy level and the oscillate strength of one exciton in CdS QDs are computed variationally as a function of the quantum dots radius and the third-order susceptibility of semiconductor quantum dots in non-resonant absorption region is studied.
通过变分法计算了量子点激子基态能量和偶极跃迁振子强度,分析了半导体量子点在非本征吸收区的三阶极化率。
2.
With the help of the coupling wave equations and a Hamiltonian approach,the relation between the third-order susceptibility and the nonlinear conversion coefficient is obtained.
在∧型三能级原子系统中,利用Stark啁啾快速绝热通道(Stark chirp rapid adiabatic passage,SCRAP)技术控制基态和激发态之间的粒子布居转移,采用耦合波方程和哈密顿方法得到了三阶极化率与非线性转换系数的关系。
6)  third-order susceptibilities
三阶极化率
1.
The numerical calculations of the third-order susceptibilities were studied on a spherical nc-Si/SiO2 quantum dot.
在理论上计算了球形量子点激子基态能级和偶极跃迁振子强度,分析了量子点激子的三阶极化率。
2.
Under the effective mass approximation,the electron state is considered to be confined within a nc-Si/SiO2 spherical quantum dot with infinite barrier,and by using the compact density matrix method,the analytic expression for the resonant third-order susceptibilities was derived.
在有效质量近似下,采用无限深势阱,理论计算nc-Si/SiO2球形量子点导带中的电子束缚态,并利用紧束缚密度矩阵理论,推导出共振三阶极化率的表达式。
补充资料:超极化


超极化


静息电位差值增大的状态。超极化的产生使膜电位距阈电位的差值增大,细胞膜的兴奋性下降。
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