1) Charge-symmetry
电荷对称性(CS)
3) Charge symmetry breaking
电荷对称性破坏
4) charge symmetry broken
电荷对称性破缺
5) charge asymmetry
电荷不对称性
1.
The experimental data (1974—1990) at S=20—1800GeV of the charge asymmetry and particle ratios of the pion,kaon and protonantiproton as a functions of the transverse momentum can be explained by the relativistic Doppler effects in the scaling (aQ⊥)νKν(aQ⊥)distribution,and the nonlinear correlations 〈p⊥(Mi)〉-Mi/〈M〉.
在能区S=20~1800GeV,π介子,K介子与质子反质子间的粒子数比与电荷不对称性作为横动量p2⊥的函数可用标度分布(aQ⊥)νKν(aQ⊥)中的〈p⊥(Mi)〉Mi/〈M〉关联与都普勒效应得到解释。
补充资料:半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以,v:‘,_‘ 一J一“。,瓜米早伙鼓幕由乌教着给话_
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