1) buried SiC layers
SiC埋层
1.
It was found that the structure of the buried SiC layers depended on the ion dose.
6×1018cm-2的C+制成SiC埋层，C+离子束的引出能量为50keV。
2) SiC coating
SiC涂层
1.
Failure behavior of C/C composites with SiC coating under stress in oxidizing environment;
SiC涂层C/C复合材料应力氧化失效行为
2.
Influence of SiC coating on antioxidation property of carbon fibers
SiC涂层对碳纤维抗氧化性能的影响
3.
SiC coating was prepared on graphite and carbon/ carbon composites using slurry sintering method to improve oxidation resistance.
测试了SiC涂层在1200℃的高温下对不同碳基体的氧化防护能力,利用扫描电子显微镜(SEM)、X-射线衍射仪(XRD)对涂层结构进行分析。
3) SiC coatings
SiC涂层
1.
The XRD, SEM, isothermal oxidation-weight loss and non-isothermal TG-DTG were used to study the properties of SiC coatings/ 3-D braided carbon fiber(composite fiber) prepared by in-situ reaction method.
采用原位反应法在三维编织碳纤维(原纤维)表面制得β-SiC涂层,通过XRD,SEM,等温氧化失重和非等温热重分析等测试手段研究了制备方法对涂层性能的影响。
2.
CVD SiC coatings were prepared by MTS-H-2 system at temperature from 1000-1300℃.
由MTS H2 体系在 10 0 0～ 130 0℃沉积了SiC涂层 ,研究了SiC涂层沉积速率和温度之间的关系 ,MTS H2 体系沉积反应的平均活化能为 114kJ mol,用理论模型证明了低温化学气相沉积SiC为动力学控制过程。
3.
SEM, EDX and XRD were applied to analyze SiC coatings deposited on the CVD furnace wall.
采用SEM、EDX、XRD测试手段对沉积炉壁产物进行了分析,结果表明:低温区沉积的SiC涂层全为β SiC;高温区SiC涂层中含有少量的游离态Si和α SiC;高温区SiC颗粒的形核和生长速率大于低温区;所以温度是影响化学气相沉积SiC涂层组成及显微结构的主要因素。
4) Si/SiC coatings
Si/SiC涂层
1.
Si/SiC coatings on C/SiC composites and their effects on the structure of the substrate;
C/SiC材料表面Si/SiC涂层及其对基底结构的影响
5) SiC-C films
SiC-C涂层
1.
SiC-C films were deposited on the surface of stainless steel using ion beam mixing.
利用Ar+离子束轰击混合沉积技术(ion beam mixing)在不锈钢基体上制备在不锈钢和碳钢基体上沉积SiC-C涂层,并然后对样品进行加后热处理热去氩处理(400℃/30min),再用5keV的氢离子辐照样品。
2.
There have been many studies on hydrogen retentiontheory of SiC-C films, but there are little study on process of preparing SiC-C films,and how to improve the hydrogen retention ability of SiC-C films.
本工作对不同工艺离子束混合制备的SiC-C涂层，研究SiC-C涂层阻氢性能及其影响因素，为SiC-C涂层实际应用提供依据。
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