1) two-slit electron interference
电子双缝干涉
1.
The history of a century of the discovery of the electron is reviewed,the proceeding of the experiment of quasiparticles fractional charges in condensed matter physic and the improvement of two-slit electron interference experiment are introduced.
回顾电子发现１００年的历史，介绍目前凝聚态物理学中准电子分数电荷实验进展及电子双缝干涉实验的改
2) electrical two-slit interference experiment
电子双缝干涉实验
1.
Based on quantum mechanical two base experiments,electrical two-slit interference experiment and Stern-Gerlach experiment, two new concepts of quantum communication theory,quantum decoherence and quantum entanglement are derived, and the new activity was given to the base experiments.
从量子力学两个基础实验———电子双缝干涉实验、Stern -Gerlach实验出发 ,引出量子信息理论的两个新概念———量子退相干与量子纠缠。
3) double-slit interference
双缝干涉
1.
Theoretical analysis of light distance difference in double-slit interference;
双缝干涉中光程差问题的理论分析
2.
Discuss of Talbot Effect Basing on Young′s Double-slit Interference;
利用杨氏双缝干涉讨论Talbot效应
3.
Influence of light-source-size on light intensity distribution of double-slit interference;
光源线度对双缝干涉光强分布的影响
4) double-slit interferometer
双缝干涉仪
5) photoelectric doubel-slit interferometer
光电双狭缝干涉仪
6) electron interference
电子干涉
1.
The calculated position of peak of photocurrent on the basis of theory of electron interference is in very good agreement with the experimental results.
2 9μm附近存在一个强电流峰 ,分析认为 ,该电流峰与多量子阱势垒以上的电子干涉有关 。
2.
On the basis of theory of electron interference, it is pointed out that there are a series of separate weak interference non-localized states above barrier for multiquantum well.
根据电子干涉理论分析指出 :多量子阱结构势垒以上的电子 ,由于其干涉效应形成一些分立的弱干涉非定域态。
补充资料：电子-电子双共振
在垂直静磁场H的方向,施加两个微波电磁场:①较弱的微波电磁场，激发电子从能级2向能级3跃迁，不致于饱和；②强的微波电磁场，激发电子从能级1向能级4跃迁，使达到饱和，从而导致能级4的电子转移至能级3，以观察反映2→3跃迁的电子自旋共振信号强度的变化，故称为电子－电子双共振。它与电子-核双共振不同之处是不涉及核的跃迁，并且观察的与电子自旋共振有关的能级和未观察的跃迁能级之间无共享的公共能级。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条