1) square pulse of flat top
平顶方波脉冲
2) flat top pules
平顶脉冲
1.
On the experiment base,contrast and analysize that ware shape changes in the flat top pules and Goss pules go through single process moving wave amplification.
在实验的基础上，对于平顶脉冲与高斯脉冲通过单程行波放大的波形变化进行了对比分析，并指出了平顶脉冲经大后影响波形变化的一些主要因素。
3) flat-topped waveform
时域平顶脉冲波形
4) flat-topped voltage pulse
平顶电压脉冲;电压方脉冲
5) square-wave pulse
方波脉冲
1.
In this paper,the anti-scaling effect of EWP which used square-wave pulse current have been studied,the data show that the anti-scaling rate is 100% when the voltage is 2V.
文中对采用方波脉冲电流的电子水处理器的阻垢效果进行了研究。
2.
In order to explore the electromagnetic pulse s effect on the electronic device,the experiments on LM324N and CD4069UB with the square-wave pulse of different width are done,in which it is found that the device circuit s damageis related to the magnitude of pulse energy to a great extent,and there is a phase from adiabatic course to therma.
为了探究电磁脉冲对电子器件的损伤机理,用不同脉宽的方波脉冲对LM324N、CD4069UB进行了注入实验,发现器件电路损伤在很大程度上与脉冲能量的大小有关,存在一个由绝热过程向热平衡转化的阶段,验证了电磁脉冲对电子器件的绝热烧毁效应。
6) rectangular pulse
方波脉冲
1.
Some integrated circuits were injected by rectangular pulse and ESD pulse for comparison of the damage effects caused by the two types of pulses.
采用方波脉冲和ESD脉冲对3种集成电路进行了注入损伤效应实验,目的是比较二者对器件损伤的异同之处。
2.
The similarities and differences of damage effects of integrated circuits were studied by the test that two chips were injected by ESD and rectangular pulse respectively.
为了考察不同波形脉冲对集成电路损伤效应的异同性,用ESD和方波脉冲对2种集成电路器件进行注入损伤效应实验,在采用曲线拟合分析法建立起波形参数与器件损伤参数间的数学模型后,讨论了不同脉冲注入时器件的损伤阈值和损伤机理。
补充资料：方波伏安法
分子式：
CAS号：
性质：是将一个对称的方波电压叠加在阶梯形电压上，记录正向脉冲后期和反向脉冲后期电流之差△I，根据电流差值对阶梯扫描电位的伏安图进行分析的方法。其伏安图呈对称峰形。可根据其峰电位和峰电流分别进行定性分析和定量分析。
CAS号：
性质：是将一个对称的方波电压叠加在阶梯形电压上，记录正向脉冲后期和反向脉冲后期电流之差△I，根据电流差值对阶梯扫描电位的伏安图进行分析的方法。其伏安图呈对称峰形。可根据其峰电位和峰电流分别进行定性分析和定量分析。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条