1) normalization potential K 0
归一化电势
2) normalized voltage
归一化电压
1.
The relationship between the equivalent barrier height of ZnO-Bi_2O_3 based varistor ceramics and normalized applied voltage was studied and it was found that the equivalent barrier height is influenced by normalized voltage greatly.
研究了ZnOBi2O3系压敏陶瓷等效势垒高度eff随着归一化电压的变化规律,发现等效势垒高度eff随着归一化电压的增加先逐渐增大,达到最大值后持续下降。
3) normalized reactance
归一化电抗
4) normalized resistance
归一化电阻
5) normalized current
归一化电流
6) normalized susceptance
归一化电纳
补充资料：公理化方法(见公理化和形式化)
公理化方法(见公理化和形式化)
axiomatical method
gongllbuafangfa公理化方法化和形式化。(axiomatieal method)见公理
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条