s: For solving higher dimensional Schrodinger equation, a number of absolutely stable three level explicit difference schemes extending the results in literature are derived by adding dissipative term.

Current collapse in AlGaN/GaN high-electron-mobility transistors was studied and the effect of effective external electrical field on the concentration of two-dimensional electron gas (2DEG) near the channel of hetero-junction of AlGaN/GaN was simulated through the self-consistent implementation of the one-dimensional Poisson-Schrdinger equations.