1) Electronic bandgap
电子禁带
2) Photonic bandgap
光子禁带
1.
The influences of the structure parameters of a two-dimensional square photonic crystal on its photonic bandgap properties are investigated with the multiple-scattering method.
用多重散射法研究了二维光子晶体的结构参量对光子禁带特性的影响。
2.
The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated.
针对介电常数对比和填充率对完整光子晶体中光子禁带以及缺陷态的影响作了研究 。
3.
The photonic crystal fiber(PCF) with a special envelop structure induces the light by photonic bandgap(PBG) effect.
光子晶体光纤(PCF)是一种具有特殊包层结构的光纤,它是利用光子禁带效应(PBG)来导光的。
3) photonic band gap
光子禁带
1.
This paper reported the method of modulating the photonic band gap firstly by light induced alignment of liquid crystals.
文章首次提出了通过光诱导液晶取向技术来调制光子晶体光子禁带的方法,进而采用平面波展开法分析了填充液晶的二维三角形光子晶体禁带结构的可调节性。
2.
In this paper,we provide new method of transfer matrixs studying the photonic band gap of one-dimensional (1D) photonic crystals.
该文提出了一种利用转移矩阵来计算一维光子晶体的光子禁带结构的新方法。
3.
In this paper the structural character of photonic crystals is reviewed, and the physical mechanism of photonic band gap formation is analyzed.
光子晶体是近十年来才发展起来的存在光子禁带的一种新型人工材料,具有操控光子行为的独特能力,在众多领域有着广泛的用途。
4) photonic forbidden band
光子禁带
1.
The characteristics of photonic forbidden band and impurity mode in doped one-dimensional photonic crystal were investigated by numeral simulated calculation with the method of characteristic matrix.
运用光在分层介质中传播的特征矩阵方法,通过数值计算,研究了掺杂一维光子晶体中光子禁带及杂质模的特性随不同偏振光及入射角的变化。
2.
The results indicate that there is a narrow high-transmittance peak in photonic forbidden band of doped one-dimensional photonic crystals.
杂质层的引入增宽了原来光子禁带的宽度,杂质态的特征与杂质层的光学厚度、折射率及在晶体中的位置等因素有关。
3.
The results indicated that the equivalent refractive indexes are not existence in photonic forbidden bands and in both sides of forbidden bands.
结果表明:在光子禁带等效折射率不存在,在光子禁带两边等效折射率分别趋于无穷大或者零;在光子透射带,等效折射率是有限值。
5) photonic band gaps
光子禁带
1.
On the basis,the relation between the enhancement of stimulated emission as well as transmissivity being greater than one and the abnormal group velocity in photonic band gaps as well as n.
由此说明光子晶体光纤的缺陷介质中掺入激活杂质时,光子禁带中能出现品质因子非常高的杂质态,具有很大的态密度,较强的受激辐射放大。
2.
Photonic crystals were periodic optical structures that were capable of generating photonic band gaps ,analogous to the way of electronic band gaps generated by periodic atomic structure .
光子晶体是周期性介电结构,它能象周期性原子结构中的电子禁带一样,产生光子禁带。
6) phononic band gap
声子禁带
补充资料：宽禁带半导体(见半导体的能带结构)
宽禁带半导体(见半导体的能带结构)
wide gap semiconductor
习一’平叼能带结构。‘J~正J“、二二，，Conauctor见半
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条