1) Broadening of diffraction lines
衍射线宽化
2) widening of diffraction line profile
衍射峰线形宽化
1.
We have studied the variation rules of widening of diffraction line profile,〔020〕displacement value〔d〕,grain size,endothermic effect and hydroxy vibration,The results demonstrate that the s.
研究了衍射峰线形宽化、〔0 2 0〕d值位移、晶粒度、吸热效应、羟基振动等变化规律 ,进而提出了拟薄水铝石的结构为〔AlOOH〕·nH2 O ,n为 0 0 80～ 0 6 0 2。
3) the widening of the peaks of X-ray diffraction
X射线衍射峰宽化
1.
The method of approximate function has been applied to analyzing the widening of the peaks of X-ray diffraction caused by decreasing the size of subgrains and increasing of lattice distortion.
结果表明，近似函数法是一种简便有效的分析铜合金X射线衍射峰宽化的方法之一，而合金元素Ag和Sn等对铜合金性能的影响与其X射线衍射峰的物理定化有明显的对应关系。
4) diffraction peaks broadening
衍射峰宽化
1.
These results reveal that the diffraction peaks broadening which was caused by non-homogeneity of.
详细论证了粉体中化学组成不均匀所引起的衍射峰宽化。
5) wide angle X-ray diffraction(WAXD)
宽角X射线衍射
6) wide angle X-ray diffraction method
宽角X射线衍射法
补充资料：IC工艺线宽
线宽:4微米/1微米/0.6微未/0.35微米/035微米等,是指IC生产工艺可达到的最小导线宽度,是IC工艺先进水平的主要指标.线宽越小,集成度就高,在同一面积上就集成更多电路单元.
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条