1) X-ray high-resolution detection
X射线高分辨探测
2) high resolution refraction survey
高分辨折射探测
3) high-resolution X-ray diffraction
高分辨X射线衍射
1.
Combining Rutherford backscattering/channeling (RBS/C) and high-resolution X-ray diffraction (HXRD) measurements, we investigate the radiation damage in GaN films with various doses and angles of Mg~+_implantation.
结合卢瑟福背散射/沟道(Rutherford backscattering/channeling,RBS/C)和高分辨X射线衍射(high-resolution X-ray diffraction,HXRD)的实验测量,研究了不同剂量和不同角度Mg+注入GaN所造成的辐射损伤。
2.
Micropipes and low-angle boundaries in 6H-SiC (0001) wafer are determined by transmission polarized light microscopy, synchrotron X-ray topography and high-resolution X-ray diffraction method, respectively.
利用透射偏光显微术、同步辐射X射线形貌术、高分辨X射线衍射方法对 6H SiC(0 0 0 1)晶片中的微管和小角度晶界等缺陷进行了研究。
3.
In this thesis, high-resolution X-ray diffraction and transmission electron microscope were used to analyze the microstruction of GaN LED on sapphire substrate.
利用高分辨X射线衍射对GaN基LED外延片的超晶格结构进行了测量,得出了超晶格的结构信息。
4) HRXRD
高分辨X射线衍射
1.
have been gained by analyzing eptaxial STO films with a high resolution X-ray diffractometer(HRXRD+ TAXRD).
本文应用高分辨X射线衍射(HRXRD+TAXRD)技术对外延生长的SrTiO3膜进行了分析,获得了有关该薄膜的晶体取向、衬底的结构特性以及弛豫态的点阵常数等信息,对今后改进SrTiO3系列样品生长工艺有重要的意义。
2.
The effect of annealing time on the epitaxial strain in GaN films was detailedly studied by high-resolution X-ray diffraction(HRXRD).
采用低压金属有机化学气相外延(LP-MOCVD)法生长Mg掺杂p型GaN薄膜,利用高分辨X射线衍射(HRXRD)技术研究不同退火时间对GaN薄膜中外延应变的影响。
5) high resolution X-ray diffraction
高分辨X射线衍射
1.
Strain in Al I[WTFZ]nGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution x-ray diffraction;
用卢瑟福背散射/沟道技术及高分辨X射线衍射技术分析不同Al和In含量的AlInGaN薄膜的应变
2.
A hexagonal GaN layer with a LT-AlN(low temperature) interlayer grown on Si(111) by metal-organic chemical vapour deposition(MOCVD) method was characterized by high resolution X-ray diffraction(HRXRD) and Rutherford backscattering(RBS)/channeling.
利用金属有机化学汽相沉积(MOCVD)法在硅衬底上生长具有AlN插入层的GaN外延膜,采用高分辨X射线衍射(HRXRD)和卢瑟福背散射/沟道(RBS/Channeling)技术研究分析其结构和应变性质。
3.
Energy dispersive spectroscopy (EDS) was employed to measure the chemical composition of the quaternary, high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) technique were used to characterize structural and optical properties of the epilayers, respectively.
在不同的生长温度和载气的条件下 ,采用低压金属有机物气相外延方法生长了系列的InAlGaN薄膜 ,通过能量色散谱 (EDS) ,高分辨X射线衍射 (HRXRD)和光致发光谱 (PL)对样品进行表征与分析 ,研究了生长工艺对InAlGaN外延层结构和光学性能的影响。
补充资料：高分辨电子显微镜(见高分辨电子显微术)
高分辨电子显微镜(见高分辨电子显微术)
high resolution electron microscope
高分辨电子显微镜high resolution eleetronmieroseope见高分辫电子显微术。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条