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1)  back-switching
背向反转
1.
Based on back-switching reaction,domain-inverted velocity can be accurately controled by multi-impulse electric field,which can be used to fabricate MgO:LiNbO_3 with submicron uniform periodical structure.
研究了掺镁铌酸锂(MgO:LiNbO3)的极化特性及其畴壁运动的性质,通过调节多个脉冲外加电场来控制畴壁的运动,在背向反转效应作用下,反转畴发生劈裂,制备出均匀的掺镁铌酸锂亚微米周期畴结构,并分析探讨了掺镁铌酸锂亚微米结构的成因及其反转机理。
2)  backswitching
背向反转效应
1.
Using the spontaneous domains backswitching and domain side-grown effects,we can explain the mechanism of the submicron domains evolution.
基于畴背向反转效应 ,利用外加短脉冲极化电场 ,通过对脉冲宽度、脉冲间隔以及脉冲个数的有效控制 ,在掺5mol%镁的铌酸锂晶体上得到周期为 1 7μm的均匀亚微米畴结构 ,其纵向深度为 30— 5 0 μm 。
3)  back-reflection
背向反射
1.
By the numerical analysis in Matlab,the back-reflection noise in the resonator fiber-optic gyro (R-FOG) and the resonator micro-optic gyro (R-MOG) was analyzed and compared in theory.
背向反射是谐振式光学陀螺(ROG)中的主要噪声之一。
2.
When the key part of the R-MOG,the integrated micro-optic ring resonator was connected with the other parts of the system,there existed the back-reflection noise.
其核心敏感部件-集成微光学环形谐振腔与系统中其他元件的连接,会产生背向反射这一噪声。
4)  reversal anticline
反转背斜
1.
Forming pattern of self-generating and self-preserving reservoirs in reversal anticline structure;
反转背斜构造自生自储油藏成藏模式
5)  back switching
反向反转
1.
Being necessarily very small in size,instability and back switching often occurs when the external voltage is removed,and creates serious problems.
为解决此问题,发展了一种通用的方法用于决定避免反向反转的铁电畴的尺寸。
6)  Trailing Switch Machine
背向转辙器
补充资料:背向
1.背对和面向。 2.反对和拥护。犹向背。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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