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1)  ferromagnetic d-wave superconductor
磁性d波超导体
2)  FdS/FdS junction
双层磁性d波超导结
1.
It is found that the Josephson critical currents in FdS/FdS junction depend to a great extent on the relative orientation of the effective exchange field of the two S electrodes,and the crystal orientation of the FdS.
通过计算双层磁性d波超导结界面势垒散射效应,研究了双层磁性d波超导结中Josephson临界电流随温度、磁交换能以及势垒强度的变化关系。
3)  d-wave superconductor
d波超导体
1.
Using the square barrier to describe the insulating layer,tunneling conductance in normal metal/insulator/d-wave superconductor c-axis tunneling junction is studied theoretically as a function of the bias voltage,insulating layer barrier strength and insulating layer thickness.
以方势垒描述绝缘层,对N/I/d波超导体c轴隧道结的微分电导进行了研究。
2.
A number of experimental studies revealed that the order parameter in high-Tc cuprates is of d-wave symmetry, and thus the properties of d-wave superconductors have been investigated theoretically for many years.
因而许多理论工作者对d波超导体的性质进行了多年研究。
4)  ferromagnetic s-wave superconductor
磁性s波超导体
5)  d-wave superconductor
d波超导
1.
Zeeman Effects on the differential conductance in normal-metal/d-wave superconductor tunnel junctions;
塞曼效应对正常金属/d波超导结中微分电导的影响
2.
We solve self-consistent equation for the d-wave superconducting gap and the Zeeman energy in the mean-field approximation under a Zeeman magnetic on the d-wave superconductor,study the Zeeman effects on the d-wave superconducting gap and the thermodynamic potential,and discuss the condition of coexistence for ferromagnetism and superconductivity.
通过外加Zeeman磁场在d波超导中,在平均场近似下,自洽求解d波超导能隙和Zeeman能量的方程,研究了Zeeman效应对d波超导序参数和热力学势的影响,阐述了磁性与超导共存条件。
3.
Taking into account the scattering effect of the insulator in normal metal-insulator-d-wave superconductor junctions, and using the Bogoliubov-de Gennes equation and the Blonder-Tinkham-Klapwijk model, we calculate the differential conductance and shot noise.
在正常金属 绝缘层 d波超导隧道结中 ,考虑到绝缘层的势垒散射效应 ,运用Bogoliubov deGennes方程和Blonder Tinkham Klapwijk理论模型 ,计算系统的微分电导和散粒噪声随偏压的变化关系 。
6)  magnetic superconductor
磁性超导体
1.
The single phase magnetic superconductors RESr 2RuCu 2O 8 (RE=Gd and Eu) were successfully synthesized and the investigations on their physical properties were carried out.
报道了磁性超导体RESr2 RuCu2 O8(RE =Gd和Eu)单相样品的合成以及对其结构和物性的研究。
补充资料:磁性材料2.薄膜磁性材料


磁性材料2.薄膜磁性材料
Magnetie Materials 2.Thin Film

在一定外加磁场作用下,其反磁化畴(磁矩取向与外磁场方向相反的畴)变为圆柱形磁畴。从膜面上看,这些柱形畴好像浮着的一群圆泡,故称磁泡或叫泡踌(另见磁性材料2.昨晶态磁性材料)。在特定的电路图形、电流方向和一定磁场情况下,可做到控制材料中磁泡的产生、传翰和消失,实现信息的储存和逻辑运算的功能。磁泡的直径在微米量级(0 .5~5协m),每个磁泡的迁移率在1 .26~12.6em八s·A/m)〔 102一i03cm八s·oe)〕,因而可制成存储密度为兆位/cmZ(Mbit/cmZ)和数据处理速率为兆位/s(M肠t/s)的运算器件。磁泡器件经过近20年研究和开发,已取得广泛的实际应用。 对磁泡材料的主要要求是:(l)各向异性常数凡>粤斌,磁化强度从>外磁场强度H;(2)杂质缺陷小,2一~”~’.J泌~-一‘产’~~一~一’、~尹一~~~’J”均匀性好。目前研究得比较清楚的有铁氧体单晶薄膜和稀土一过渡金属薄膜。从制备工艺和性能稳定、器件开发等情况看,以铁氧体磁泡材料比较成熟,早期是用钙钦石型铁氧体单晶片来作磁泡材料,后为YIG单晶薄膜所取代。它是用液相外延法在Gd3Ga5OI:(简称GGO)基片上生成的单晶薄膜,其厚为微米量级。表4为稀土石榴石R3FesolZ的磁性;表5为一些磁泡材料的基本特性数值。农4稀土石抽石R.Fe‘ol,的磁性┌───────────┬────┬────┬────┬────┬────┬────┬────┬────┬─────┬────┬────┐│R │Y │Sm │EU │Gd │Tb │Dy │、Ho │Er │T】11 │Yb │Lu │├───────────┼────┼────┼────┼────┼────┼────┼────┼────┼─────┼────┼────┤│补偿温度,~p,K │ 560 │ 560 │ 570 │ 290 │ 246 │ 220 │ 136 │ 84│41000 ││ │ (ZMHz) │ (20MHz) │└────────┴──────┴────────┘·3.磁光材料呻〕 当前所用的磁光材料是利用磁光效应制作的磁性材料。
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