1)  LiNbO3:Ce:Cu crystal
LiNbO3:Ce:Cu晶体
1.
In order to optimize the nonvolatile holographic recording in LiNbO3∶Ce∶Cu crystal with green light,we solved the joint two-center material equations and the coupled wave equations.
为了对在LiNbO3∶Ce∶Cu晶体中绿光作为记录光的非挥发全息记录进行优化,联立求解了双中心物质方程和双光束耦合波方程,数值分析了平均空间电荷场(SCF)和衍射效率随晶体的氧化还原态、记录光与敏化光的光强比以及深浅中心的掺杂浓度的变化。
2)  Li
Li
1.
EAM CALCULATION OF FORMATION ENTHALPIES OF Al,Li AND Mg(Ti) INTERMETALLIC COMPOUNDS;
Al-Li-Mg(Ti)合金形成焓的EAM研究
2.
Preparation of Eu,Li Co-doped ZnO Red Fluorescence Nanofibers by Electrospinning and Their Characterization;
电纺丝法制备纳米级Eu，Li共掺ZnO荧光材料
3.
Preparation of Nanometer Material ZnO:Eu,Li with Red Fluorescence by the Sol-Gel Method;
溶胶-凝胶法制备纳米级ZnO:Eu,Li红色荧光材料
3)  Li~+
Li+
1.
SrZnO_2∶Eu~(3+),Li~++ phosphor powder by long wavelength UV excitation was synthesized by conventional solid-state reaction method.
采用高温固相法合成了一种长波紫外激发的SrZnO2∶Eu3+,Li+发光材料,用X射线衍射谱、荧光光谱对样品进行了表征。
4)  Li+
Li+
1.
The crystal structures of α,β,γ and δ-MnO2 and their adsorption behaviors of Li++ were studied.
研究了α、β、γ和δ-MnO2的晶体结构以及对Li+的吸附行为。
2.
The Sr3B2O6∶Tb3+,Li++ green phosphor was synthesized by the general high temperature solid-state reaction and its luminescence properties were investigated.
用高温固相法合成了Sr3B2O6∶Tb3+,Li+绿色荧光粉,并研究粉体的发光性质。
5)  Li +
Li+
1.
The results show that the optimum position of Li ++ ions intercalated into V 2O 5 layers is underneath (or above) the double-bond oxygen atoms and close to the central position.
结果表明 ,Li+引入V2 O5 层间的最佳位置是在双键氧之下 (或之上 ) ,且靠近层的中心位置 ,此时它与周围原子间的作用力非常微弱 ,并且材料的导电性增强 ,使夹层复合材料Li+注入 /脱出具有很好的可逆性和较好的光学性
6)  Li~+
Li~+
1.
Enhanced Photoluminescense of Gd_2O_3:Sm~(3+) Nanocrystals by Li~++ Doping;
Li~+离子掺杂Gd_2O_3：Sm~(3+)纳米晶的发光增强
2.
Determination of Cations(Li~++,Na~+,K~+) in Water and Geological Samples by Low Pressure Ion Chromatography;
低压离子色谱法测定水样和地质样品中的Li~+、Na~+、K~+离子
参考词条
补充资料：晶体管-晶体管逻辑电路
晶体管-晶体管逻辑电路
transistor-transistor logic
    集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。