1) linewidth broadening
线宽展宽
2) spread coil
展宽线圈
1.
By adopting the two stage bridge mode circuit net with each bridge arming with multichip resonator and using the method of rational crystal design and spread coil,the problem of flatting the pass band top has been resolved for middle band width of sing side band mode filter;and discrete top side band mode filter of 2.
采用一臂多晶体的差接桥型电路,通过合理的晶体设计及展宽线圈方法,解决了中等带宽单边带滤波器通带调平的问题,研制出了具有12KHz带宽且载频边衰减陡峭的2。
3) Line-Broadening
谱线展宽
4) line broadening
谱线展宽
1.
With the method of spectra of modulated photoreflectance, the experimental measurement of optical transitions E_1 and E_1+Δ_1 and their line broadening ω for In_(1-x)Al_xSb (0≤x≤0.
55)外延层的光跃迁E_1和E_1+△_1及其谱线展宽ω,进行实验测定。
5) line broadening
线展宽
6) linewidth enhancement factor
线宽展宽因数
1.
Measurement of the linewidth enhancement factor of semiconductor lasers;
半导体激光器线宽展宽因数的测量
2.
For the sake of accurately estimating linewidth enhancement factor of semiconductor lasers with external cavity,optical feedback self-mixing interferometric technology and gradient-based optimization algorithm were introduced to achieve best data-theoretical fitting.
为了精确估计带外腔半导体激光器的线宽展宽因数,采用了光反馈自混合技术和梯度最优算法,可以达到数据-理论的最佳拟合,同时提出了改进的梯度迭代公式,并在参量迭代时引入可变步长,取得了仿真和实验数据。
3.
The basic principle of measuring the linewidth enhancement factor(LEF) using optical feedback self-mixing interference(OFSMI) method is introduced.
介绍了光反馈自混合干涉(OFSMI)法测量半导体激光器线宽展宽因数(LEF)的基本原理。
补充资料：IC工艺线宽
线宽:4微米/1微米/0.6微未/0.35微米/035微米等,是指IC生产工艺可达到的最小导线宽度,是IC工艺先进水平的主要指标.线宽越小,集成度就高,在同一面积上就集成更多电路单元.
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条