1) PtSi infrared detector
PtSi红外探测器
1.
The basic theory of the extension of cut off wavelength of PtSi infrared detectors is discussed.
讨论了将PtSi红外探测器截止波长延长的理论基础 ,并介绍了采用在衬底掺入Tl+和Ir+,MBE生长P+层以及低能离子注入B+,In+来延长PtSi红外探测器截止波长的三种方
2) Infrared detector
红外探测器
1.
How to define noise and associated performance parameters for infrared detector and infrared focal plane array detectors;
关于红外探测器与红外焦平面阵列探测器性能参数描述方法的商榷
2.
Monolithic integration of HIP infrared detector with MOS readout switch;
HIP红外探测器与MOS读出开关的单片集成
3.
Analysis of temperature of special-gas infrared detector;
特气红外探测器的温度分析
3) IR detector
红外探测器
1.
Demands analysis of IR detectors for space remote sensor;
航天光学遥感器对红外探测器的需求分析
2.
Automatic Measuring System for Relative Spectral Response of IR Detectors;
全自动红外探测器相对光谱响应测量系统
3.
Automatic Measurment of IR Detector Parameters;
红外探测器参数自动计量测试
4) Infrared sensor
红外探测器
1.
The geometry between target’s position and infrared sensors’ positions affects the accuracy of bearing-only location with passive infrared sensors greatly.
目标位置和红外探测器位置之间的几何关系对被动红外探测器纯角度定位精度影响很大,为获得最佳的几何关系,建立了红外探测器机动优化模型。
5) Infrared detectors
红外探测器
1.
The Investigation of Mesa Etching for 2 .4μm GaInAsSb Infrared detectors;
2.4μm GaInAsSb红外探测器台面腐蚀研究
2.
Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
6) IR detectors
红外探测器
1.
IR detectors, made of polycrystalline lead sulfide (PbS) thin films are responsive in the near infrared region of 1-3 micron, is suitable for indoor fire alarm.
采用多晶硫化铅薄膜制备的红外探测器,其工作波段为1-3μm的近红外区,适用于室内火警探测。
补充资料：PTSI
分子式：C8H7NO3S
分子量：197.21
CAS号：4083-64-1
性质：密度1.295。沸点144°C (10 mmHg)。折射率1.533-1.535。闪点145°C。水溶性reacts。
分子量：197.21
CAS号：4083-64-1
性质：密度1.295。沸点144°C (10 mmHg)。折射率1.533-1.535。闪点145°C。水溶性reacts。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条