2) metal-oxide semiconductor(MOS)
金氧半导体;金属氧化物半导体
3) metal oxide semiconductor
金属氧化物半导体
1.
The reactions of gas gas and gas solid on the surface of metal oxide semiconductor and reactive electronic processes are discussed in this paper.
讨论了金属氧化物半导体表面的气 -气、气 -固反应及其相应的电子过程 ,建立了分析气敏作用机理的理论模型 ,并提出了改进传感器性能的指导性意见。
4) metal oxide semiconductor(MOS)
金属氧化物半导体(MOS)
5) CMOS
互补金属氧化物半导体
1.
25 μm 1P3M CMOS process is applied in the design.
25μm 1P3M的标准互补金属氧化物半导体(CMOS)工艺。
2.
A development of infrared focal plane array (IRFPA) complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) is introduced.
介绍了一种红外焦平面阵列( IRFPA)互补金属氧化物半导体 ( CMOS)读出集成电路 ( ROIC)的研制方案 ,叙述了读出电路的电路原理及工作时序、电路参数设计、版图设计及工艺分析。
3.
The radio frequency integrated circuits based on CMOS (Complementary Metal Oxide Semiconductor) process have more and more markets and prosperous future.
而基于CMOS(互补金属氧化物半导体)工艺的射频集成电路具有着广泛的市场和发展前景,无线接收机中的关键模块低噪声放大器(Low Noise Amplifier)则成为热点中的热点。
6) metal oxide thin films
半导体金属氧化物薄膜
1.
Reported were recent researches on gas-sensing properties of metal oxide thin films when irradiated by UV light: Experimental results revealed that the conductivities of SnO2, In2O3, ZnO thin films were improved evidently under UV irradiation, and at room temperature the sensitivities of the films to detect CO, NO2 were improved while the response and recovery time were shortened.
介绍了近期文献中对紫外光照下半导体金属氧化物薄膜气敏特性的研究结果:紫外光照引起SnO2,In2O3,ZnO薄膜电导显著增大;提高室温下薄膜对CO,NO2气体检测的灵敏度,减少响应和恢复时间;介绍了一种对紫外光增强气敏机制的物理模型分析方法。
补充资料：气敏半导体(见传感器半导体材料)
气敏半导体(见传感器半导体材料)
gas sensory sernieonduetor
气敏半导体gas sensory Semieonductor见传感器半导体材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条