1) threshold voltage decreasing
阈值电压下降
1.
Analysis of Threshold Voltage Decreasing for Single-Gate and Double-Gate SOI MOSFET
短沟道SOI中的阈值电压下降问题的研究
2.
Based on the charge sharing principle,the model of threshold voltage decreasing due to the short channel effect for double gate and surrounding gate MOSFET s is derived.
基于电荷分享原理 ,推导了双栅和环栅 MOSFET短沟效应引起的阈值电压下降 ,分析了衬底掺杂浓度、栅氧化层厚度及硅膜厚度等因素对阈值电压下降的影响 ,并用数值模拟验证了理论结果 。
2) lower threshold voltage V T-
下限阈值电压VT-
3) dropout voltage level
解扣[下降]电压值
4) threshold voltage
阈值电压
1.
Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET;
应变SiGe SOI量子阱沟道PMOSFET阈值电压模型研究
2.
Analytical threshold voltage model for fully depleted SOI MOSFETs;
全耗尽SOIMOSFET阈值电压解析模型
3.
2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects;
考虑量子效应的短沟道MOSFET二维阈值电压模型
5) Voltage threshold
电压阈值
6) subthreshold value voltage
亚阈值电压
1.
A design method of low-power CMOS two stages amplifier working in the condition of subthreshold value voltage is introdluced,and an in-depth analysis of circuit parameter and performance is made.
因此提出一种工作在亚阈值电压范围内的低功耗CMOS两级运放的设计方法,并对电路的参数和性能做深入分析是很必要的。
补充资料：初速下降量超过允许值
一般允许值，小口径枪械为50%，大口径枪械为10%，即认为枪管寿命告终。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条