1) etch stop layer
蚀刻阻挡层
1.
For further optimal process,a single GaInP etch stop layer with 30～50 nm thickness,which was inserted in the vertical structure of normal quantum well material,was verified.
为了进一步优化工艺 ,在普通的单量子阱材料横向结构中嵌入了 30～ 5 0 nm的 Ga In P蚀刻阻挡层。
2.
In order to improve the controllability of the dry etching depth during the fabrication process of ridge waveguide, an etch stop layer is designed in the vertical structure of GaInP/AlGaInP ridge waveguide.
针对脊形波导制作过程中蚀刻深度不易控制的问题 ,对GaInP/AlGaInP材料系统中加入蚀刻阻挡层进行了研
2) etch-stopper
刻蚀阻挡
1.
The etch-stopper and passivation layers are introduced and the technological parameters and process are designed.
采用底栅TFT结构并引入刻蚀阻挡层和钝化保护层,通过工艺参数和工艺流程的设计,研制了100℃低温氢化非晶硅TFT。
3) laminar flow etching
层流刻蚀
4) Deepetching
深层刻蚀
5) diffusion barrier
阻挡层
1.
In this paper, we focus on the research and the new development of the copper metallization and the diffusion barriers.
本文介绍了大马士革工艺中铜金属化以及阻挡层的研究现状。
6) barrier
[英]['bæriə(r)] [美]['bærɪɚ]
阻挡层
1.
Destruction of Hydrogen Permeation Barrier in CO_2;
氢渗透阻挡层在CO_2中的破坏
2.
Analysis of Cr-C-O Hydrogen Permeation Barrier on the Surface of the Zirconium Hydride by XPS;
氢化锆表面Cr-C-O氢渗透阻挡层XPS分析
3.
Fabrication of Nb-doped Pb(Zr,Ti)O_3 Ferroelectric Capacitors on Si with Ti-Al Barrier;
含Ti-Al阻挡层的硅基Nb掺杂Pb(Zr,Ti)O_3铁电电容器的研究
补充资料：阻挡层
分子式：
CAS号：
性质：夹在绝热层-衬层/推进剂之间阻挡组分迁移的薄层材料，用以防止由于组分迁移而引起的界面脱黏和性能变化，常用带有活性基团和高交联密度的聚合物，或金属薄膜(如铝箔)作为阻挡层。
CAS号：
性质：夹在绝热层-衬层/推进剂之间阻挡组分迁移的薄层材料，用以防止由于组分迁移而引起的界面脱黏和性能变化，常用带有活性基团和高交联密度的聚合物，或金属薄膜(如铝箔)作为阻挡层。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条