DC characteristics in different structures of 4H-SiC MESFET were investigated by 2D device simulator, with emphasis on the influence of surface-trap.

Surface-trap effects on DC and transient characteristics in 4H-SiC MESFET s are investigated by using two-dimensional numerical simulation.

Resonant modes in quantum well structure composed of photonic crystals with different lattice constants;

Optical properties and material growth of GaAs(110) quantum wells;

Light emitting model of GaN LED quantum well;

Modulated photon confined states with graded-index photonic quantum well structure;

Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering;

GaAs/AlGaAs(110)multiple quantum wells(MQWs)were grown by solid source molecular beam epitaxy(MBE)with a valved arsenic cracker cell.

The DR spectra of GaAs/Al 0 25 Ga 0 75 As multiple quantum wells (MQWs) samples were measured experimentally.

Analyzing the unstable reason of GaN-based blue light LED peak wavelength,it was the quantum restrictionStark effect caused by the multi-quantum well area.

To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVDⅡ system.

Based on the logarithmic relation of gain on carrier density,the rate equations are described for multi-quantum well of vertical cavity surface emitting lasers(VCSELs) taking into account the influence of nonradiative depopulation rate.