1) distance of side gate/MESFET
旁栅距
1.
In this paper we study the relation between the sidegating threshold voltage( V th SG ) and the distance of side gate/MESFET( L SG ),and find that the threshold voltage varies linearly with the distance.
本文研究了旁栅阈值电压 Vth SG与旁栅距 LSG的关系 ,发现 Vth SG的大小与 LSG成正比关系 ,并理论探讨了产生这一现象的机制 ,从而验证了旁栅阈值电压与旁栅距关系的有关理论。
2) space between rasters
栅距
1.
A measurement method of a precision image for space between rasters based on image analysis is introduced.
介绍一种栅纹栅距的精密图像测量方法。
3) distance between gates
栅栅间距
1.
The optimality analysis of the distance between gates in the design of triple-gates switches is described.
针对多栅开关器件结构设计中的参数栅栅间距的选取作了分析 ,确定当栅栅间距等于源漏间距对栅数的平均值时 ,开关性能最优 ,并在实验中得到验
4) vane pitch
叶栅栅距
5) sidegating effect
旁栅效应
1.
Study on the relation between sidegating effect and the distance of side-gate/MESFET of GaAs MESFETs;
GaAs MESFET旁栅效应与旁栅距的关系研究
2.
The relation between GaAs substrate s deep level EL2 and two phenomena (light sensibility and hysteresis) of sidegating effect;
GaAs衬底深能级EL2与电路旁栅效应的光敏特性和迟滞现象
3.
This letter studies the sidegating effect of GaAs MESFET under the same processing technology of planar selective ion implantation.
主要研究了平面选择离子注入隔离工艺条件下的GaAs MESFET的旁栅效应,分别设计了不同的测试方法来分析旁栅效应的多种特性,并从理论上对测试结果进行了解释。
6) distance sidelobe
距离旁瓣
1.
Some new methods which will be used to handle distance-hiding,distance sidelobe,Doppler sensitivity are given as well.
介绍了二相编码信号及几种较好的可用于脉冲雷达的信号形式,给出了二相编码应用时所遇到的主要问题及处理方法,提出了处理距离遮挡、距离旁瓣、多普勒敏感的新思路。
补充资料：旁旁
1.强壮有力貌。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条