1) MgO film
MgO膜
1.
Resist sputtering characteristic of MgO films prepared by different deposition condition detailed studied by our own manufacture equipment.
利用自行研制的实验装置深入研究了不同工艺条件下制备的MgO薄膜的抗溅射性能 ,为优化用于PDP的MgO膜的制备工艺提供了科学依
2) MgO film
MgO薄膜
1.
Growth of highly (111) orientated MgO films by Sol-Gel method;
溶胶-凝胶生长(111)择优取向的MgO薄膜
2.
Design of the about Devices for Measuring the Secondary emission coefficient of MgO films;
MgO薄膜二次电子发射系数测量装置的设计
3.
MgO film was fabricated on(100) Si substrates with DC sputtering method,(100) highly preferred oriented MgO film and MgO/TiN bi-buffer layers were successfully obtained by optimizing the preparation parameters,and the preferred(100) orientation mechanism affected by temperature was also discussed in the paper.
采用直流磁控溅射并通过优化工艺参数,在(100)Si衬底上成功制备了高度(100)择优的MgO薄膜和MgO/TiN双层膜结构。
3) MgO thin film
MgO薄膜
1.
The main methods of preparing MgO thin films,including Electron-beam evaporation,PLD,Magn-etron sputtering,MOCVD,MBE and Sol-gel were reviewed.
综述了MgO薄膜的主要制备方法,包括电子束蒸发、脉冲激光沉积、磁控溅射、金属有机物化学气相沉积、分子束外延和溶胶-凝胶法等。
2.
MgO thin films deposited on si (100) substrate have been prepared by pulsed laser deposition (PLD) at different conditions.
用激光脉冲沉积技术生长、制备出了一系列不同真空度、不同衬底温度和不同激光脉冲能量的MgO薄膜。
3.
The main methods of preparing MgO thin films,including Electron-beam evaporation,Magnetron sputtering, Sol-gel,MBE and PLD were reviewed.
综述了具有二次电子发射功能的MgO薄膜的主要制备方法,包括电子束蒸发、磁控溅射、溶胶-凝胶、分子束外延和脉冲激光沉积法。
4) MgO films
MgO薄膜
1.
Measurement results by XRD,FTIR and XPS indicate that the polycrystalline MgO films with cubic structure can be successfully grown on the Si(111)substrates.
采用电泳沉积法(EPD)在Si(111)衬底上制备出了MgO薄膜。
2.
Systematic investigation of preparation-parameter dependence of MgO films crystallinity during pulsed-laser depositon of MgO films was carried out.
研究了脉冲激光淀积MgO薄膜的过程中,制备工艺参数对薄膜结晶性的影响。
3.
As an insulting and protective layer,MgO films play a important role for operating characteristics of plasma display panel.
本文研究了MgO薄膜在制备过程中工艺条件对薄膜结构的影响。
5) MgO thin films
MgO薄膜
1.
MgO thin films deposited on Si(100) were prepared by cathodic vacuum arc deposition(CVAD) at different oxygen flow rates.
采用阴极真空电弧离子沉积技术在硅基片上制备出了MgO薄膜。
2.
Superconductor buffer layer MgO thin films have been deposited on glass, quartz, stainless steel and nickel by plasma enhanced chemical vapor deposition using organic magnesium (Mg(thd)2) as precursor.
以有机镁[Mg(thd)_2]为起始物,采用等离子强化化学气相沉积(PECVD)工艺,在玻璃、石英、不锈钢和镍衬底上制备了超导缓冲层MgO薄膜,当衬底温度≥400℃时,MgO薄膜为单一(100)晶向,具有理想的表面织构。
6) FeCoB/MgO film
FeCoB/MgO薄膜
1.
In this thesis, MgO was used as insulator layer and FeCoB was used as ferromagnetic layer, the structure, magnetic properties and thermal stability of FeCoB/MgO films were studied.
为了研究薄膜的热稳定性,我们分别在不同温度下对FeCoB/MgO薄膜进行了真空热处理,并用X射线衍射仪(XRD)及俄歇电子能谱(AES)对热处理后的样品进行了结构及成分分析。
补充资料：Mgo
氧化镁
氧化镁
产品名称 氧化镁
分子式 mgo
规格 95%
产地 上海
数量 不限
交货地点 本公司仓库
性质 白色轻松粉末，无臭、无味，暴露在空气中，容易吸收水份和二氧化碳，本品溶于酸和铵盐，不溶于水和乙醇，熔点2800，沸点3600，氧化镁有高度耐火绝缘性能。
用途 用于橡胶、塑料、电线、电缆染料、油漆、玻璃、陶瓷、化学试剂、医药、食品添加剂等。
包装 塑料编织袋内衬聚乙烯每袋净重20kg。
贮运 储存在干燥库房中，与潮湿性无机酸、强碱类物留隔储存，防止受潮，防止雨淋。
指标名称 指标
特级 一级 二级
氧化镁含量(%) > 95 93 -
灼烧矢量(%) < 3 4 -
氧化钙含量(%) < 1.0 1.2 -
盐酸不溶物含量(%) < 0.1 0.2 -
硫酸盐含量(以so4)(%） < 0.2 0.3 -
氯化物含量(以cl)(%） < 0.07 0.3 -
铁盐含量(以fe计)(%) < 0.05 0.06 -
筛余物(40孔/厘米) < 0.005 0.05 -
(%)(80孔/厘米) < 0.1 / -
视比容(毫升/克) > 7 6 -
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